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AM1214-300

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION TheAM1214-300deviceisahighpowertransistorspecificallydesignedforL-Bandradarpulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■5:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMETRY ■ME

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AM1214-300

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIAM1214-300isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: ?InternalInput/OutputMatchingNetwork ?CommonBase ?PG=6.5dbat325W/1400MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

1214-300

300Watts-50Volts,100us,10Radar12001400MHz

GENERALDESCRIPTION The1214-300isaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratonehundredfiftymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspecifi

ADPOW

Advanced Power Technology

1214-300M

300Watts-40Volts,150ms,10Radar1200-1400MHz

GENERALDESCRIPTION The1214-300Misaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratonehundredfiftymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspecif

ADPOW

Advanced Power Technology

1214-300M

300Watts-40Volts,150關(guān)s,10Radar1200-1400MHz

GENERALDESCRIPTION The1214-300Misaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratonehundredfiftymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspecif

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1214-300V

300Watts-50Volts,330關(guān)s,10Radar1200-1400MHz

GENERALDESCRIPTION The1214-300Visaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratthreehundredthirtymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspe

MicrosemiMicrosemi Corporation

美高森美美高森美公司

PH1214-300M

RadarPulsedPowerTransistor300W,1.2-1.4GHz,150關(guān)sPulse,10Duty

MACOM

Tyco Electronics

PH1214-300M

RadarPulsedPowerTransistor

Features ?NPNsiliconmicrowavepowertransistors ?Commonbaseconfiguration ?BroadbandClassCoperation ?Highefficiencyinter-digitizedgeometry ?Diffusedemitterballastingresistors ?Goldmetallizationsystem ?Internalinputandoutputimpedancematching ?Hermeticmetal/cerami

MA-COM

M/A-COM Technology Solutions, Inc.

PH1214-300M

RadarPulsedPowerTransistor,300Watts,1.20-1.40GHz,150mSPulse,10Duty

Features ■NPNSiliconMicrowavePowerTransistor ■CommonBaseConfiguration ■BroadbandClassCOperation ■HighEfficiencyInterdigitatedGeometry ■GoldMetalizationSystem ■InternalInputandOutputImpedanceMatching ■HermeticMetal/CeramicPackage

MACOM

Tyco Electronics

詳細(xì)參數(shù)

  • 型號(hào):

    AM1214-300

  • 制造商:

    ASI

  • 制造商全稱:

    ASI

  • 功能描述:

    NPN SILICON RF POWER TRANSISTOR

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ST
24+
90
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ST
23+
TO-59
8510
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ASI
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
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WALLINDUSTRIES
2023+
NA
80000
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WALLINDUSTRIES
2308+
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4285
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WALLINDUSTRIES
20+
NA
5000
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WALL
23+
SMD
38668
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AMTEK
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SOP-16
100500
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DATEL
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1
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41840
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更多AM1214-300供應(yīng)商 更新時(shí)間2025-1-23 8:30:00