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AM2729-110中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

AM2729-110
廠商型號

AM2729-110

功能描述

S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

文件大小

61.89 Kbytes

頁面數(shù)量

4

生產廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-20 23:00:00

AM2729-110規(guī)格書詳情

DESCRIPTION

The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

The AM2729-110 is supplied in the BIGPAC? Hermetic Metal/Ceramic package with internal Input/Output matching circuitry, and is intended for military and other high reliability applications.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER SITE BALLASTED

■ 3:1 VSWR CAPABILITY

■ LOW THERMAL RESISTANCE

■ INPUT/OUTPUT MATCHING

■ OVERLAY GEOMETRY

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 105 W MIN. WITH 6.5 dB GAIN

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