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AM28F020-120EC中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

AM28F020-120EC
廠商型號(hào)

AM28F020-120EC

功能描述

2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

文件大小

509.2 Kbytes

頁(yè)面數(shù)量

35 頁(yè)

生產(chǎn)廠商 Advanced Micro Devices
企業(yè)簡(jiǎn)稱

AMD超威半導(dǎo)體

中文名稱

美國(guó)超威半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-14 19:30:00

AM28F020-120EC規(guī)格書(shū)詳情

GENERAL DESCRIPTION

The Am28F020 is a 2 Megabit Flash memory organized as 256 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F020 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F020 is erased when shipped from the factory.

DISTINCTIVE CHARACTERISTICS

■ High performance

— Access times as fast as 70 ns

■ CMOS low power consumption

— 30 mA maximum active current

— 100 μA maximum standby current

— No data retention power consumption

■ Compatible with JEDEC-standard byte-wide

32-pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

■ 10,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ±5

■ Latch-up protected to 100 mA from

–1 V to VCC +1 V

■ Flasherase Electrical Bulk Chip Erase

— One second typical chip erase time

■ Flashrite Programming

— 10 μs typical byte program time

— 4 s typical chip program time

■ Command register architecture for microprocessor/microcontroller compatible write interface

■ On-chip address and data latches

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ Automatic write/erase pulse stop timer

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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