AM28F512A中文資料超威半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

廠商型號 |
AM28F512A |
功能描述 | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
文件大小 |
463.73 Kbytes |
頁面數(shù)量 |
34 頁 |
生產(chǎn)廠商 | Advanced Micro Devices |
企業(yè)簡稱 |
AMD【超威半導(dǎo)體】 |
中文名稱 | 美國超威半導(dǎo)體公司官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-5-18 16:10:00 |
人工找貨 | AM28F512A價格和庫存,歡迎聯(lián)系客服免費人工找貨 |
AM28F512A規(guī)格書詳情
GENERAL DESCRIPTION
The Am28F512A is a 512 Kbit Flash memory organized as 64 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F512A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F512A is erased when shipped from the factory.
DISTINCTIVE CHARACTERISTICS
■ High performance
— 70 ns maximum access time
■ CMOS low power consumption
— 30 mA maximum active current
— 100 μA maximum standby current
— No data retention power consumption
■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
■ 100,000 write/erase cycles minimum
■ Write and erase voltage 12.0 V ?5
■ Latch-up protected to 100 mA from -1 V to VCC +1 V
■ Embedded Erase Electrical Bulk Chip-Erase
— Two seconds typical chip-erase including pre-programming
■ Embedded Program
— 4 μs typical byte-program including time-out
— One second typical chip program
■ Command register architecture for
microprocessor/microcontroller compatible write interface
■ On-chip address and data latches
■ Advanced CMOS flash memory technology
— Low cost single transistor memory cell
■ Embedded algorithms for completely self-timed write/erase operations
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
AMD |
22+ |
PLCC32 |
8200 |
原裝現(xiàn)貨庫存.價格優(yōu)勢!! |
詢價 | ||
AMD |
23+ |
原廠原包 |
19960 |
只做進口原裝 終端工廠免費送樣 |
詢價 | ||
AMD |
24+/25+ |
196 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 |
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