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BQ2969

BQ2969OvervoltageProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithRegulatedOutputSupply

1Features ?2-series,3-series,and4-series cellovervoltageprotection(OVP) ?FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy ?FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) ?Outputpinoptions: –Activehigh –Open-drain-activepulldown

TI1Texas Instruments

德州儀器

BQ2969T

BQ2969TOvervoltageandOvertemperatureProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithLDOOutputandControl/PTCInput

1Features ?2-series,3-series,and4-seriescellovervoltage protection(OVP) ?FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy ?FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) ?Controlinputpin,whichcanimplementcell overtemperatureprotec

TITexas Instruments

德州儀器美國德州儀器公司

BQ2969XY

BQ2969OvervoltageProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithRegulatedOutputSupply

1Features ?2-series,3-series,and4-series cellovervoltageprotection(OVP) ?FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy ?FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) ?Outputpinoptions: –Activehigh –Open-drain-activepulldown

TI1Texas Instruments

德州儀器

BQ2969XYT

BQ2969TOvervoltageandOvertemperatureProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithLDOOutputandControl/PTCInput

1Features ?2-series,3-series,and4-seriescellovervoltage protection(OVP) ?FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy ?FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) ?Controlinputpin,whichcanimplementcell overtemperatureprotec

TITexas Instruments

德州儀器美國德州儀器公司

FN2969

CMOSProgrammablePeripheralInterface

Description TheIntersil82C55AisahighperformanceCMOSversionoftheindustrystandard8255Aandismanufacturedusingaself-alignedsilicongateCMOSprocess(ScaledSAJIIV).ItisageneralpurposeprogrammableI/Odevicewhichmaybeusedwithmanydifferentmicroprocessors.Thereare2

Intersil

Intersil Corporation

NB2969A

LowPower,ReducedEMIClockSynthesizer

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTE2969

MOSFETN-Channel,EnhancementModeHighSpeedSwitch

Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent ●LowStaticDrain–SourceOn–StateResistance

NTE

NTE Electronics

RN2969

TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications ?IncludingtwodevicesinUS6(ultrasuperminitypewith6leads) ?Withbuilt-inbiasresistors ?Simplifycircuitdesign ?Reduceaquantityofpartsandmanufacturingprocess ?ComplementarytoRN1967~RN1969

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RN2969CT

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitand DriverCircuitApplications ?TwodevicesareincorporatedintoafinepitchSmallMold(6pin) package. ?Incorporatingabiasresistorintoatransistorreducespartscount. Reducingthepartscountenablethemanufactureofevermore

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

RN2969FE

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitand DriverCircuitApplications ?TwodevicesareincorporatedintoanExtreme-Super-Mini(6-pin) package. ?Incorporatingabiasresistorintoatransistorreducespartscount. Reducingthepartscountenablesthemanufactureofevermore

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

詳細參數(shù)

  • 型號：

    AM2969LCB

  • 功能描述：

    DRAM Controller

供應(yīng)商型號品牌批號封裝庫存備注價格
TEMIC
21+
TLCC-44
16
原裝現(xiàn)貨假一賠十
 詢價
AMD
新
2
全新原裝 貨期兩周
 詢價
AMD
22+
CDIP
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
 詢價
amd
23+
NA
337
專做原裝正品,假一罰百!
 詢價
AMD
22+
DIP
2638
原裝正品!公司現(xiàn)貨!
 詢價
AMD
23+
DIP-16
28533
原盒原標,正品現(xiàn)貨 誠信經(jīng)營 價格美麗 假一罰十!
 詢價
AMD
23+
DIP-16
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
AMD
23+
DIP-16
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
AMD
23+
DIP-16
7000
詢價
AMD
22+
DIP
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
更多AM2969LCB供應(yīng)商 更新時間2025-1-23 17:24:00

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