AM29BDS323D中文資料超威半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The Am29BDS323 is a 32 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 2,097,152 words of 16 bits each. This device uses a single VCC of 1.7 to 1.9 V to read, program, and erase the memory array. A 12.0-volt VPP may be used for faster program performance if desired. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

■ Single 1.8 volt read, program and erase (1.7 to 1.9 volt)

■ Multiplexed Data and Address for reduced I/O count

— A0–A15 multiplexed as D0–D15

— Addresses are latched with AVD# control inputs

while CE# low

■ Simultaneous Read/Write operation

— Data can be continuously read from one bank

while executing erase/program functions in other

bank

— Zero latency between read and write operations

■ Read access times at 40 MHz

— Burst access times of 20 ns @ 30 pF

at industrial temperature range

— Asynchronous random access times

of 110 ns @ 30 pF

— Synchronous random access times

of 120 ns @ 30 pF

■ Burst length

— Continuous linear burst

■ Power dissipation (typical values, 8 bits switching, CL = 30 pF)

— Burst Mode Read: 25 mA

— Simultaneous Operation: 40 mA

— Program/Erase: 15 mA

— Standby mode: 0.2 μA

■ Sector Architecture

— Eight 4 Kword sectors and sixty-three sectors of

32 Kwords each

— Bank A contains the eight 4 Kword sectors and

fifteen 32 Kword sectors

— Bank B contains forty-eight 32 Kword sectors

■ Sector Protection

— Software command sector locking

— WP# protects the last two boot sectors

— All sectors locked when VPP = VIL

■ Software command set compatible with JEDEC 42.4 standards

— Backwards compatible with Am29F and Am29LV

families

■ Minimum 1 million erase cycle guarantee per sector

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Data# Polling and toggle bits

— Provides a software method of detecting

program and erase operation completion

■ Erase Suspend/Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

■ Hardware reset input (RESET#)

— Hardware method to reset the device for reading

array data

■ CMOS compatible inputs, CMOS compatible outputs

■ Low VCC write inhibit

■ Package Option

— 47-ball FBGA