AM29DL800BT120EC中文資料超威半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The Am29DL800B is an 8 Mbit, 3.0 volt-only flash memory device, organized as 524,288 words or 1,048,576 bytes. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages. The word wide (x16) data appears on DQ0–DQ15; the byte-wide (x8) data appears on DQ0–DQ7. This device requires only a single 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS

■ Simultaneous Read/Write operations

— Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

— Zero latency between read and write operations

— Read-while-erase

— Read-while-program

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

■ Manufactured on 0.35 μm process technology

— Compatible with 0.5 μm Am29DL800 device

■ High performance

— Access times as fast as 70 ns

■ Low current consumption (typical values at 5 MHz)

— 7 mA active read current

— 21 mA active read-while-program or read-whileerase current

— 17 mA active program-while-erase-suspended current

— 200 nA in standby mode

— 200 nA in automatic sleep mode

— Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode

■ Flexible sector architecture

— Two 16 Kword, two 8 Kword, four 4 Kword, and fourteen 32 Kword sectors in word mode

— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and fourteen 64 Kbyte sectors in byte mode

— Any combination of sectors can be erased

— Supports full chip erase

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing multiple program command sequences

■ Sector protection

— Hardware method of locking a sector to prevent any program or erase operation within that sector

— Sectors can be locked in-system or via programming equipment

— Temporary Sector Unprotect feature allows code changes in previously locked sectors

■ Top or bottom boot block configurations available

■ Embedded Algorithms

— Embedded Erase algorithm automatically pre-programs and erases sectors or entire chip

— Embedded Program algorithm automatically programs and verifies data at specified address

■ Minimum 1,000,000 program/erase cycles guaranteed per sector

■ Package options

— 44-pin SO

— 48-pin TSOP

— 48-ball FBGA

■ Compatible with JEDEC standards

— Pinout and software compatible with single-power-supply flash standard

— Superior inadvertent write protection

■ Data# Polling and Toggle Bits

— Provides a software method of detecting program or erase cycle completion

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends or resumes erasing sectors to allow reading and programming in other sectors

— No need to suspend if sector is in the other bank

■ Hardware reset pin (RESET#)

— Hardware method of resetting the device to reading array data