AM29F004B-T-70JF中文資料超威半導體數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The Am29F004B is a 4 Mbit, 5.0 volt-only Flash memory device organized as 524,288 bytes. The data appears on DQ0–DQ7. The device is offered in a 32-pin PLCC package. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

■ 5.0 Volt single power supply operation

— Minimizes system-level power requirements

■ High performance

— Access times as fast as 70 ns

■ Manufactured on 0.32 μm process technology

■ Ultra low power consumption (typical values at 5 MHz)

— 20 mA typical active read current

— 30 mA typical program/erase current

— 1 μA typical standby mode current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Top or bottom boot block configurations available

■ Minimum 1,000,000 write cycle guarantee per sector

■ Package option

— 32-pin PLCC

■ Compatible with JEDEC standards

— Pinout and software compatible with singlepower supply Flash

— Superior inadvertent write protection

■ Embedded Algorithms

— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies data at specified addresses

■ Erase Suspend/Erase Resume

■ Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

■ Data# Polling and toggle bits

— Provides a software method of detecting program or erase operation completion

■ 20-year data retention at 125°C