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AM29F016-75SI中文資料超威半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

AM29F016-75SI
廠商型號

AM29F016-75SI

功能描述

16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

文件大小

219.76 Kbytes

頁面數(shù)量

36

生產(chǎn)廠商 Advanced Micro Devices
企業(yè)簡稱

AMD超威半導(dǎo)體

中文名稱

美國超威半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-18 22:52:00

AM29F016-75SI規(guī)格書詳情

GENERAL DESCRIPTION

The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory organized as 2 Megabytes of 8 bits each. The 2 Mbytes of data is divided into 32 sectors of 64 Kbytes for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. The Am29F016 is offered in 48-pin TSOP and 44-pin SO packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

■ 5.0 Volt ± 10 for read and write operations

— Minimizes system level power requirements

■ Compatible with JEDEC-standards

— Pinout and software compatible with single-power supply Flash

— Superior inadvertent write protection

■ 48-pin TSOP

■ 44-pin SO

■ Minimum 100,000 write/erase cycles guaranteed

■ High performance

— 70 ns maximum access time

■ Sector erase architecture

— Uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased. Also supports full chip erase

■ Group sector protection

— Hardware method that disables any combination of sector groups from write or erase operations (a sector group consists of 4 adjacent sectors of 64 Kbytes each)

■ Embedded Erase Algorithms

— Automatically pre-programs and erases the chip or any sector

■ Embedded Program Algorithms

— Automatically programs and verifies data at specified address

■ Data Polling and Toggle Bit feature for detection of program or erase cycle completion

■ Ready/Busy output (RY/BY)

— Hardware method for detection of program or erase cycle completion

■ Erase Suspend/Resume

— Supports reading or programming data to a sector not being erased

■ Low power consumption

— 25 mA typical active read current

— 30 mA typical program/erase current

■ Enhanced power management for standby mode

— <1 μA typical standby current

— Standard access time from standby mode

■ Hardware RESET pin

— Resets internal state machine to the read mode

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