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AM29F800BT-70EF中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

AM29F800BT-70EF
廠商型號(hào)

AM29F800BT-70EF

功能描述

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

文件大小

1.37744 Mbytes

頁(yè)面數(shù)量

44 頁(yè)

生產(chǎn)廠商 Advanced Micro Devices
企業(yè)簡(jiǎn)稱

AMD超威半導(dǎo)體

中文名稱

美國(guó)超威半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-2-25 17:43:00

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AM29F800BT-70EF規(guī)格書(shū)詳情

GENERAL DESCRIPTION

The Am29F800B is an 8 Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21631. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 V VPP is not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— 5.0 Volt-only operation for read, erase, and

program operations

— Minimizes system level requirements

■ Manufactured on 0.32 μm process technology

— Compatible with 0.5 μm Am29F800 device

■ High performance

— Access times as fast as 55 ns

■ Low power consumption (typical values at 5 MHz)

— 1 μA standby mode current

— 20 mA read current (byte mode)

— 28 mA read current (word mode)

— 30 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

fifteen 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

— Sectors can be locked via programming

equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Top or bottom boot block configurations available

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Minimum 1,000,000 program/erase cycles per

sector guaranteed

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

— 48-pin TSOP

— 44-pin SO

— 48-ball FBGA

— Known Good Die (KGD)

(see publication number 21631) (Continue ...)

產(chǎn)品屬性

  • 型號(hào):

    AM29F800BT-70EF

  • 功能描述:

    閃存 8M(1MX8/512KX16) Parallel NOR Fl 5V

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 數(shù)據(jù)總線寬度:

    1 bit

  • 存儲(chǔ)類型:

    Flash

  • 存儲(chǔ)容量:

    2 MB

  • 結(jié)構(gòu):

    256 K x 8

  • 接口類型:

    SPI

  • 電源電壓-最大:

    3.6 V

  • 電源電壓-最?。?/span>

    2.3 V

  • 最大工作電流:

    15 mA

  • 工作溫度:

    - 40 C to + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝:

    Reel

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