AM29LV081B-120EC中文資料超威半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The Am29LV081B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes. The device is

offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only

a single, 3.0 volt VCCsupply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— 2.7 to 3.6 volt read and write operations for battery-powered applications

■ Manufactured on 0.32 μm process technology

— Compatible with 0.5 μm Am29LV081 device

■ High performance

— Access times as fast as 70 ns

■ Ultra low power consumption (typical values at 5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

■ Flexible sector architecture

— Sixteen 64 Kbyte sectors

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent any program

or erase operations within that sector

Sectors can be locked in-system or via programming equipment

Temporary Sector Unprotect feature allows code changes

in previously locked sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing multiple

program command sequences

■ Embedded Algorithms

— Embedded Erase algorithm automatically preprograms

and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies data

at specified addresses

■ Minimum 1,000,000 write cycle guarantee per sector

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

— 40-pin TSOP

■ Compatibility with JEDEC standards

— Pinout and software compatible with single power supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from, or program data to, a sector

that is not being erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data

■ Command sequence optimized for mass storage

— Specific addresses not required for unlock cycles