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AM29LV128ML113REI中文資料超威半導體數據手冊PDF規(guī)格書

AM29LV128ML113REI
廠商型號

AM29LV128ML113REI

功能描述

128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control

文件大小

1.22298 Mbytes

頁面數量

65

生產廠商 Advanced Micro Devices
企業(yè)簡稱

AMD超威半導體

中文名稱

美國超威半導體公司官網

原廠標識
數據手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-19 9:33:00

AM29LV128ML113REI規(guī)格書詳情

GENERAL DESCRIPTION

The Am29LV128MH/L is a 128 Mbit, 3.0 volt single power supply flash memory devices organized as 8,388,608 words or 16,777,216 bytes. The device has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

■ Single power supply operation

— 3 volt read, erase, and program operations

■ VersatileI/O? control

— Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V

■ Manufactured on 0.23 μm MirrorBit process technology

■ Secured Silicon Sector region

— 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence

— May be programmed and locked at the factory or by the customer

■ Flexible sector architecture

— Two hundred fifty-six 32 Kword (64 Kbyte) sectors

■ Compatibility with JEDEC standards

— Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection

■ Minimum 100,000 erase cycle guarantee per sector

■ 20-year data retention at 125°C

PERFORMANCE CHARACTERISTICS

■ High performance

— 90 ns access time

— 25 ns page read times

— 0.5 s typical sector erase time

— 15 s typical effective write buffer word programming time: 16-word/32-byte write buffer reduces overall programming time for multiple-word updates

— 4-word/8-byte page read buffer

— 16-word/32-byte write buffer

■ Low power consumption (typical values at 3.0 V, 5 MHz)

— 13 mA typical active read current

— 50 mA typical erase/program current

— 1 μA typical standby mode current

■ Package options

— 56-pin TSOP

— 64-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES

■ Software features

— Program Suspend & Resume: read other sectors before programming operation is completed

— Erase Suspend & Resume: read/program other sectors before an erase operation is completed

— Data# polling & toggle bits provide status

— Unlock Bypass Program command reduces overall multiple-word or byte programming time

— CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices

■ Hardware features

— Sector Group Protection: hardware-level method of preventing write operations within a sector group

— Temporary Sector Group Unprotect: VID-level method of changing code in locked sector groups

— WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or erase cycle completion

產品屬性

  • 型號:

    AM29LV128ML113REI

  • 制造商:

    Spansion

  • 功能描述:

    Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 110ns 56-Pin TSOP

供應商 型號 品牌 批號 封裝 庫存 備注 價格
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