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AM29LV400B-120WAEB中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

AM29LV400B-120WAEB
廠商型號(hào)

AM29LV400B-120WAEB

功能描述

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

文件大小

516.429 Kbytes

頁(yè)面數(shù)量

40 頁(yè)

生產(chǎn)廠商 Advanced Micro Devices
企業(yè)簡(jiǎn)稱

AMD超威半導(dǎo)體

中文名稱

美國(guó)超威半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-11-18 11:12:00

AM29LV400B-120WAEB規(guī)格書(shū)詳情

GENERAL DESCRIPTION

The Am29LV400 is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system using only a single 3.0 volt VCC supply. No VPP is required for write or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors

■ High performance

— Full voltage range: access times as fast as 100 ns

— Regulated voltage range: access times as fast as 90 ns

■ Ultra low power consumption (typical values at 5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 10 mA read current

— 20 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent any program or erase operations within that sector

Sectors can be locked via programming equipment

Temporary Sector Unprotect feature allows code changes in previously locked sectors

■ Top or bottom boot block configurations available

■ Embedded Algorithms

— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies data at specified addresses

■ Typical 1,000,000 write cycles per sector (100,000 cycles minimum guaranteed)

■ Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

■ Compatibility with JEDEC standards

— Pinout and software compatible with singlepower supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data

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