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AM29LV6402MH100RPHI中文資料超威半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
廠商型號(hào) |
AM29LV6402MH100RPHI |
功能描述 | 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O??Control |
文件大小 |
932.51 Kbytes |
頁面數(shù)量 |
57 頁 |
生產(chǎn)廠商 | Advanced Micro Devices |
企業(yè)簡稱 |
AMD【超威半導(dǎo)體】 |
中文名稱 | 美國超威半導(dǎo)體公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊 | |
更新時(shí)間 | 2024-11-16 18:02:00 |
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AM29LV6402MH100RPHI規(guī)格書詳情
GENERAL DESCRIPTION
The Am29LV6402M consists of two 64 Mbit, 3.0 volt single power supply flash memory devices and is organized as 4,194,304 doublewords or 8,388,608 words. The device has a 32-bit wide data bus that can also function as an 16-bit wide data bus by using the WORD# input. The device can be programmed either in the host system or in standard EPROM programmers.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
— 3 volt read, erase, and program operations
■ VersatileI/OTM control
— Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V
■ Manufactured on 0.23 μm MirrorBitTM process technology
■ SecSi? (Secured Silicon) Sector region
— 128-doubleword/256-word sector for permanent, secure identification through an 8-doubleword/16-word random Electronic Serial Number, accessible through a command sequence
— May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
— One hundred twenty-eight 32 Kdoubleword (64 Kword) sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles per sector
■ 20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
■ High performance
— 100 ns access time
— 30 ns page read times
— 0.5 s typical sector erase time
— 22 μs typical write buffer doubleword programming time: 16-doubleword/32-word write buffer reduces overall programming time for multiple-word updates
— 4-doubleword/8-word page read buffer
— 16-doubleword/32-word write buffer
■ Low power consumption (typical values at 3.0 V, 5 MHz)
— 26 mA typical active read current
— 100 mA typical erase/program current
— 2 μA typical standby mode current
■ Package options
— 80-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■ Software features
— Program Suspend & Resume: read other sectors before programming operation is completed
— Erase Suspend & Resume: read/program other sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
■ Hardware features
— Sector Group Protection: hardware-level method of preventing write operations within a sector group
— Temporary Sector Unprotect: VID-level method of changing code in locked sectors
— WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or erase cycle completion