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    AM29LV800BB90WBE中文資料超威半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

    AM29LV800BB90WBE
    廠商型號

    AM29LV800BB90WBE

    功能描述

    8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

    文件大小

    569.02 Kbytes

    頁面數(shù)量

    42

    生產(chǎn)廠商 Advanced Micro Devices
    企業(yè)簡稱

    AMD超威半導(dǎo)體

    中文名稱

    美國超威半導(dǎo)體公司官網(wǎng)

    原廠標識
    數(shù)據(jù)手冊

    下載地址一下載地址二到原廠下載

    更新時間

    2025-1-5 16:50:00

    AM29LV800BB90WBE規(guī)格書詳情

    GENERAL DESCRIPTION

    The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

    DISTINCTIVE CHARACTERISTICS

    ■ Single power supply operation

    — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

    — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors

    ■ Manufactured on 0.35 μm process technology

    — Compatible with 0.5 μm Am29LV800 device

    ■ High performance

    — Full voltage range: access times as fast as 80 ns

    — Regulated voltage range: access times as fast as 70 ns

    ■ Ultra low power consumption (typical values at 5 MHz)

    — 200 nA Automatic Sleep mode current

    — 200 nA standby mode current

    — 7 mA read current

    — 15 mA program/erase current

    ■ Flexible sector architecture

    — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode)

    — One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode)

    — Supports full chip erase

    — Sector Protection features:

    A hardware method of locking a sector to prevent any program or erase operations within that sector

    Sectors can be locked in-system or via programming equipment

    Temporary Sector Unprotect feature allows code changes in previously locked sectors

    ■ Unlock Bypass Program Command

    — Reduces overall programming time when issuing multiple program command sequences

    ■ Top or bottom boot block configurations available

    ■ Embedded Algorithms

    — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

    — Embedded Program algorithm automatically writes and verifies data at specified addresses

    ■ Minimum 1,000,000 write cycle guarantee per sector

    ■ Package option

    — 48-ball FBGA

    — 48-pin TSOP

    — 44-pin SO

    ■ Compatibility with JEDEC standards

    — Pinout and software compatible with singlepower supply Flash

    — Superior inadvertent write protection

    ■ Data# Polling and toggle bits

    — Provides a software method of detecting program or erase operation completion

    ■ Ready/Busy# pin (RY/BY#)

    — Provides a hardware method of detecting program or erase cycle completion

    ■ Erase Suspend/Erase Resume

    — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

    ■ Hardware reset pin (RESET#)

    — Hardware method to reset the device to reading array data

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