GENERAL DESCRIPTION (PDL129)

The Am29PDL129H is a 128 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8 Mwords. The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed in-system or in standard EPROM programmers. A 12.0 V VPP is not required for write or erase operations.

DISTINCTIVE CHARACTERISTICS

MCP Features

■ Consists of Am29PDL127H/Am29PDL129H, 64 Mb pSRAM and two Am29LV640M.

■ Power supply voltage of 2.7 to 3.1 volt

■ High performance (XIP)

— Access time as fast as 65 ns initial / 25 ns page

■ High performance (Data Storage)

— Access time as fast as 110 ns initial / 30 ns page

■ Package

— 93-Ball FBGA

■ Operating Temperature

— –40°C to +85°C

Flash Memory Features (XIP)

AM29PDL127H/AM29PDL129H

ARCHITECTURAL ADVANTAGES

■ 128 Mbit Page Mode device

— Page size of 8 words: Fast page read access from random locations within the page

■ Dual Chip Enable inputs (PDL129 only)

— Two CE# inputs control selection of each half of the memory space

■ Single power supply operation

— Full Voltage range: 2.7 to 3.1 volt read, erase, and program operations for battery-powered applications

■ Simultaneous Read/Write Operation

— Data can be continuously read from one bank while executing erase/program functions in another bank

— Zero latency switching from write to read operations

■ FlexBank Architecture

— 4 separate banks, with up to two simultaneous operations per device

PDL127:

— Bank A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

— Bank B: 48 Mbit (32 Kw x 96)

— Bank C: 48 Mbit (32 Kw x 96)

— Bank D: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

PDL129:

— Bank 1A: 48 Mbit (32 Kw x 96)

— Bank 1B: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

— Bank 2A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

— Bank 2B: 48 Mbit (32 Kw x 96)

■ SecSiTM (Secured Silicon) Sector region

— Up to 128 words accessible through a command sequence

— Up to 64 factory-locked words

— Up to 64 customer-lockable words

■ Both top and bottom boot blocks in one device

■ Manufactured on 0.13 μm process technology

■ 20-year data retention at 125°C

■ Minimum 1 million erase cycle guarantee per sector

PERFORMANCE CHARACTERISTICS

■ High Performance

— Page access times as fast as 25 ns

— Random access times as fast as 65 ns

■ Power consumption (typical values at 10 MHz)

— 45 mA active read current

— 25 mA program/erase current

— 1 μA typical standby mode current

SOFTWARE FEATURES

■ Software command-set compatible with JEDEC 42.4 standard

— Backward compatible with Am29F and Am29LV families

■ CFI (Common Flash Interface) complaint

— Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices

■ Erase Suspend / Erase Resume

— Suspends an erase operation to allow read or program operations in other sectors of same bank

■ Unlock Bypass Program command

— Reduces overall programming time when issuing multiple program command sequences

HARDWARE FEATURES

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase cycle completion

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data

■ WP#/ACC (Write Protect/Acceleration) input

— At VIL, hardware level protection for the first and last two 4K word sectors.