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AM80610-030中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

AM80610-030
廠商型號(hào)

AM80610-030

功能描述

RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS

文件大小

44.57 Kbytes

頁(yè)面數(shù)量

3 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱(chēng)

STMICROELECTRONICS意法半導(dǎo)體

中文名稱(chēng)

意法半導(dǎo)體集團(tuán)官網(wǎng)

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數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-3 18:28:00

AM80610-030規(guī)格書(shū)詳情

DESCRIPTION

The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range.

AM80610-030 utilizes a rugged, overlay, emitter ballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers. Typical applications include military communications, ECM, and test equipment.

The AM80610-030 is provided in the industry standard, metal/ceramic AMPAC? hermetic package.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER SITE BALLASTED

■ INPUT/OUTPUT MATCHING

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 30 W MIN. WITH 8.5 dB GAIN

產(chǎn)品屬性

  • 型號(hào):

    AM80610-030

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱(chēng):

    STMicroelectronics

  • 功能描述:

    RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS

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6000
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17
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NEOWOY
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80
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NEOWOY
16+
NA
880000
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AMD
23+
DIP40
28000
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AMD
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80000
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amd
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N/A
6980
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AMD
1
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NEOWOY
22+
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50000
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