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BA885

Current-controlledRFresistorforswitchingandattenuatingapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BA885

SiliconPINDiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BA885

SiliconPINDiode

SiliconPINDiode ?Current-controlledRFresistorforswitchingandattenuatingapplications ?Frequencyrange1MHz...2GHz ?EspeciallyusefulasantennaswitchinTV-sattuners ?Verylowharmonics ?Pb-free(RoHScompliant)package ?QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BA885

SiliconPINDiode

●Current-controlledRFresistorforswitchingandattenuatingapplications ●Frequencyrange1MHz…2GHz ●EspeciallyusefulasantennaswitchinTV-sattuners

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BA885

SiliconPINDiode

Features Current-controlledRFresistorforswitchingandattenuatingapplications Frequencyrange1MHz2GHz EspeciallyusefulasantennaswitchinTV-sattuners

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

BF885S

SiliconNPNEpitaxialPlanarRFTransistor

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BGD885

CATVamplifiermodule

DESCRIPTION HybridamplifiermoduleforCATV/MATVsystemsoperatingoverafrequencyrangeof40to860MHzatavoltagesupplyof24V(DC). FEATURES ?Excellentlinearity ?Extremelylownoise ?Siliconnitridepassivation ?Ruggedconstruction ?Goldmetallizationensuresexcellentrelia

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BGE885

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BGE885

CATVamplifiermodule

DESCRIPTION HybridamplifiermoduleforuseinCATVsystemsoperatingoverafrequencyrangeof40to860MHzwithavoltagesupplyof24V(DC). FEATURES ?Excellentlinearity ?Extremelylownoise ?Ruggedconstruction ?TiPtAumetallizedcrystalsensureoptimalreliability.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BGX885N

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

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AME
18
SOT-89
200
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AME
SOT-89
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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AME
2308+
SOT-89
4862
只做進(jìn)口原裝!假一賠百!自己庫存價(jià)優(yōu)!
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AME
24+
SOT-89
3000
原裝正品,歡迎來電咨詢!
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AME
23+
SOT-23-5
50000
全新原裝正品現(xiàn)貨,支持訂貨
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AMEINC
2018+
SOT23-5
24112
專業(yè)LDO有現(xiàn)貨熱賣品
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AMEINC
24+
SOT23-5
36000
原裝現(xiàn)貨
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AME
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
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AMEINC
23+
SOT23-5
69850
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SK
22+
SOT23-5
53500
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更多AME885AEFTZ供應(yīng)商 更新時(shí)間2025-1-28 14:15:00

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