| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AN3254 | SPI protocol for the STPMC1 metering device | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
150VN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體 | AOSMD | ||
BluetoothMultimediaSoC 1.1.Features ?Operationvoltagefrom2.8Vto5.2V ?Bluetooth4.1+EDRcompliant ?-90dBmsensitivityfor1Mbpsmodeand5dBmtransmitpower ?-107dBmsensitivityFMreceiver ?1-wireor4-wiresSD-cardinterface ?USB2.0hostanddevice ?Integrated90dBSNRADCandstereoDAC | BEKENBeken Corporation 博通集成博通集成電路(上海)股份有限公司 | BEKEN | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,5.7A,RDS(ON)=24mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,26A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=39mW@VGS=4.5V. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,7.8A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,7.8A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,8.0A,RDS(ON)=25mW@VGS=10V. RDS(ON)=28mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=35mW@VGS=2.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,26A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=39mW@VGS=4.5V. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
Single/Dual/Triple/QuadDS3/E3/STS-1LIUs | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
PANASONI |
22+ |
DIP16 |
8200 |
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!! |
詢價(jià) | ||
23+ |
DIP |
5000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道。可提供大量庫(kù)存,詳 |
詢價(jià) | |||
PANASONI |
23+ |
DIP16 |
3880 |
正品原裝貨價(jià)格低 |
詢價(jià) | ||
A |
24+ |
DIP-16 |
15 |
詢價(jià) | |||
Panasonic |
24+ |
DIP |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
PINE BOTTOM |
23+ |
DIP |
5177 |
現(xiàn)貨 |
詢價(jià) | ||
Panasonic |
23+ |
高頻管 |
155 |
專營(yíng)高頻管模塊,全新原裝! |
詢價(jià) | ||
Panasinic |
22+ |
SOP36 |
2500 |
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢! |
詢價(jià) | ||
panasoni |
23+ |
SOP |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
Panasonic(松下) |
2020+ |
原廠封裝 |
350000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存 |
詢價(jià) |
