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AO8810L中文資料萬國半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

AO8810L
廠商型號

AO8810L

功能描述

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件大小

117.18 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商 Alpha & Omega Semiconductors
企業(yè)簡稱

AOSMD萬國半導(dǎo)體

中文名稱

美國萬國半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-14 15:27:00

AO8810L規(guī)格書詳情

General Description

The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO8810L is offered in a lead-free package. Standard Product AO8810 is Pb-free (meets ROHS & Sony 259 specifications). AO8810L is a Green Product ordering option. AO8810 and AO8810L are electrically identical.

Features

VDS (V) = 20V

ID = 7 A (VGS = 4.5V)

RDS(ON) < 20m? (VGS = 4.5V)

RDS(ON) < 24m? (VGS = 2.5V)

RDS(ON) < 32m? (VGS = 1.8V)

ESD Rating: 2000V HBM

產(chǎn)品屬性

  • 型號:

    AO8810L

  • 制造商:

    AOSMD

  • 制造商全稱:

    Alpha & Omega Semiconductors

  • 功能描述:

    Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
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