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AOD413YL中文資料萬國半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

AOD413YL
廠商型號

AOD413YL

功能描述

P-Channel Enhancement Mode Field Effect Transistor

文件大小

117.47 Kbytes

頁面數(shù)量

5

生產(chǎn)廠商 Alpha & Omega Semiconductors
企業(yè)簡稱

AOSMD萬國半導(dǎo)體

中文名稱

美國萬國半導(dǎo)體官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-4 10:16:00

AOD413YL規(guī)格書詳情

General Description

The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, inside and out. It uses Pb-free die attach and plating material(meets ROHS & Sony 259 specifications). AOD413YL is a Green Product ordering option. AOD413Y and AOD413YL are electrically identical.

Features

VDS (V) = -40V

ID = -12A (VGS = -10V)

RDS(ON) < 45m? (VGS = -10V)

RDS(ON)

產(chǎn)品屬性

  • 型號:

    AOD413YL

  • 制造商:

    AOSMD

  • 制造商全稱:

    Alpha & Omega Semiconductors

  • 功能描述:

    P-Channel Enhancement Mode Field Effect Transistor

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