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AOP610

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAOP610usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.ASchottkydiodeinparallelwiththen-channelFETredu

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOP610L

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAOP610usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.ASchottkydiodeinparallelwiththen-channelFETredu

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AQW610EH

PhotoMOSRELAYS

PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQW610EH

BothNOandNCcontactsincorporatedinacompactDIP8-pinReinforcedinsulation

FEATURES 1.60Vtypecoupleshighcapacity(0.5A)withlowon-resistance(typ.1?). 2.Reinforcedinsulation5,000V Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 3.Aprrox.1/2thespacecomparedwithth

PanasonicPanasonic Semiconductor

松下松下電器

AQW610EHA

PhotoMOSRELAYS

PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQW610EHA

BothNOandNCcontactsincorporatedinacompactDIP8-pinReinforcedinsulation

FEATURES 1.60Vtypecoupleshighcapacity(0.5A)withlowon-resistance(typ.1?). 2.Reinforcedinsulation5,000V Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 3.Aprrox.1/2thespacecomparedwithth

PanasonicPanasonic Semiconductor

松下松下電器

AQW610EHAX

PhotoMOSRELAYS

PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQW610EHAX

BothNOandNCcontactsincorporatedinacompactDIP8-pinReinforcedinsulation

FEATURES 1.60Vtypecoupleshighcapacity(0.5A)withlowon-resistance(typ.1?). 2.Reinforcedinsulation5,000V Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 3.Aprrox.1/2thespacecomparedwithth

PanasonicPanasonic Semiconductor

松下松下電器

AQW610EHAZ

PhotoMOSRELAYS

PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQW610EHAZ

BothNOandNCcontactsincorporatedinacompactDIP8-pinReinforcedinsulation

FEATURES 1.60Vtypecoupleshighcapacity(0.5A)withlowon-resistance(typ.1?). 2.Reinforcedinsulation5,000V Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 3.Aprrox.1/2thespacecomparedwithth

PanasonicPanasonic Semiconductor

松下松下電器

AQW610S

PhotoMOSRELAYS

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQW610SX

PhotoMOSRELAYS

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQW610SZ

PhotoMOSRELAYS

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

ARM610

Generalpurpose32-bitmicroprocessor

ZARLINK

Zarlink Semiconductor

ARM-610

Generalpurpose32-bitmicroprocessor

ZARLINK

Zarlink Semiconductor

ASMB-610

LGA1200Intel?Xeon?W&10thGen.Core?ProprietaryServerBoardwith4xDDR4,1xPCIeX16,2xPCIeX4,5xUSB3.2,3xSATA3,QuadLANsandIPMI

Features ?ProprietaryserverboardwithLGA1200Intel?Xeon?W&10thGen. Core?i9/i7/i5/i3processors ?CompatiblewithHPC-61serieschassis ?DDR42933/2666/2400MHzECC/Non-ECCUDIMMupto128GB ?OnePCIex16slotortwoPCIex8slotssupportFH/10.5LengthCards ?TwoPCIeX4slots

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技(中國(guó))有限公司

ASMB-610

1U18short-depthEdgeAcceleratorServerwithIntel?Xeon?W&10thGen.Core?processors,supporting4expansionslots

Features ?Processor:SingleIntel?Xeon?W&10thGen.Core?processors ?Memory:DDR42933/2666/2400MHzECC/Non-ECCUDIMMupto128GB ?OnePCIex16slotortwoPCIex8slotssupportFH/10.5”LengthCards* ?TwoPCIeX4slotssupportoneexternalandoneinternalLowProfileCards ?Twoho

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技(中國(guó))有限公司

AT-610

FixedAttenuators(N,BNC,TNC)

HIROSEHirose Electric Company

廣瀨日本廣瀨電機(jī)株式會(huì)社

ATS610LSA

DYNAMIC,PEAK-DETECTING,DIFFERENTIALHALL-EFFECTGEAR-TOOTHSENSORS

DYNAMIC,PEAK-DETECTING,DIFFERENTIALHALL-EFFECTGEAR-TOOTHSENSORS TheATS610LSAandATS611LSBgear-toothsensorsareoptimizedHallICplusmagnetmodulesthatprovideauser-friendlysolutionfordigitalgear-toothsensingapplications.Eachmodulecombinesinacompacthigh-temperatureplast

Allegro

Allegro MicroSystems

ATS610LSA

TRUEZERO-SPEEDHALL-EFFECTGEAR-TOOTHSENSOR

TheATS622LSBisanoptimizedHall-effectsensingintegratedcircuitandmagnetcombinationthatprovidesauser-friendlysolutionfortruezero-speeddigitalgear-toothsensing.Thesensormoduleconsistsofaplasticshellthatholdstogetherasamarium-cobaltmagnet,apolepiece,andaHall-ef

Allegro

Allegro MicroSystems

詳細(xì)參數(shù)

  • 型號(hào):

    AOP610

  • 功能描述:

    MOSFET N/P-CH COMPL 30V 8-PDIP

  • RoHS:

  • 類(lèi)別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列

  • 系列:

    -

  • 產(chǎn)品目錄繪圖:

    8-SOIC Mosfet Package

  • 標(biāo)準(zhǔn)包裝:

    1

  • 系列:

    - FET

  • 型:

    2 個(gè) N 溝道(雙) FET

  • 特點(diǎn):

    邏輯電平門(mén)

  • 漏極至源極電壓(Vdss):

    60V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    3A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    75 毫歐 @ 4.6A,10V Id 時(shí)的

  • Vgs(th)(最大):

    3V @ 250µA 閘電荷(Qg) @

  • Vgs:

    20nC @ 10V 輸入電容(Ciss) @

  • Vds:

    - 功率 -

  • 最大:

    1.4W

  • 安裝類(lèi)型:

    表面貼裝

  • 封裝/外殼:

    PowerPAK? SO-8

  • 供應(yīng)商設(shè)備封裝:

    PowerPAK? SO-8

  • 包裝:

    Digi-Reel®

  • 產(chǎn)品目錄頁(yè)面:

    1664(CN2011-ZH PDF)

  • 其它名稱(chēng):

    SI7948DP-T1-GE3DKR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
AOS/萬(wàn)代
2019+
DIP8
6700
原廠渠道 可含稅出貨
詢(xún)價(jià)
AOS/萬(wàn)代
24+
PDIP-8
333888
AOS原裝正品專(zhuān)業(yè)直銷(xiāo)
詢(xún)價(jià)
AOS
2015+
SOP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
詢(xún)價(jià)
Alpha&Omega
24+
8-DIP
4965
詢(xún)價(jià)
AOS
23+
PDIP-8
5000
原裝正品,假一罰十
詢(xún)價(jià)
AlphaSemiconductor&Omega
23+
8-PDIP
6680
全新原裝優(yōu)勢(shì)
詢(xún)價(jià)
ALPHA
100
全新原裝 貨期兩周
詢(xún)價(jià)
AOS
23+
DIP8
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
詢(xún)價(jià)
AOS
21+
DIP-8
12588
原裝現(xiàn)貨價(jià)格優(yōu)勢(shì)
詢(xún)價(jià)
AOS
24+
DIP8
65300
一級(jí)代理/放心購(gòu)買(mǎi)!
詢(xún)價(jià)
更多AOP610供應(yīng)商 更新時(shí)間2024-12-31 16:04:00