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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
AORN1001FTF	文件：96.13 Kbytes Page：4 Pages	Molded, 50 mil Pitch, Dual-In-Line Thin Film Resistor, Precision Automotive, AEC-Q200 Qualified, Networks FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015%) ?LowTCRtracking±5ppm/°C ?Passessulfurresista	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
AORN1001FTS	文件：96.13 Kbytes Page：4 Pages	Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015%) ?LowTCRtracking±5ppm/°C ?Passessulfurresista	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
AORN1001FUF	文件：96.13 Kbytes Page：4 Pages	Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015%) ?LowTCRtracking±5ppm/°C ?Passessulfurresista	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
AP1001BSQ	文件：109.64 Kbytes Page：4 Pages	Lead-FreePackage,LowConductanceLoss Description TheAP1001BSQusedthelatestAPECPowerMOSFETsilicontechnologywiththeadvancedtechnologypackagingtoprovidetheloweston-resistanceloss,lowprofileanddualsidedcoolingcompatible. TheGreenFETTMpackageiscompatiblewithexistingsolderingtechniquesandisidealfor	A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司	A-POWER
AP1001-XXM	文件：1.7929 Mbytes Page：36 Pages	BobbintronElectricalCorporation	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
APC1001J	文件：1.36032 Mbytes Page：26 Pages	AirPurificationComboONE KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel	SCIOSENSE Sciosense B.V.	SCIOSENSE
APC1001U	文件：1.36032 Mbytes Page：26 Pages	AirPurificationComboONE KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel	SCIOSENSE Sciosense B.V.	SCIOSENSE
APC1001U_EK	文件：1.36032 Mbytes Page：26 Pages	AirPurificationComboONE KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel	SCIOSENSE Sciosense B.V.	SCIOSENSE
APL1001J	文件：37.95 Kbytes Page：2 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV?SINGLEDIEISOTOP?PACKAGE	ADPOW Advanced Power Technology	ADPOW
APL1001J	文件：75.68 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APL1001P	文件：37.95 Kbytes Page：2 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV?SINGLEDIEISOTOP?PACKAGE	ADPOW Advanced Power Technology	ADPOW
APN1001	文件：195.71 Kbytes Page：5 Pages	CircuitModelsforPlasticPackagedMicrowaveDiodes Introduction Discrete,low-cost,surfacemountsemiconductordiodesareattractivechoicesforUHFandmicrowaveapplicationswherepackageparasiticmayhaveasignificantimpactonperformance.ThemostcommonpackagestylesaretheSOT-23andtheSOD-323(Figure1)whichwereneitherdesigne	SKYWORKSSkyworks Solutions Inc. 思佳訊美國(guó)思佳訊公司	SKYWORKS
APT1001	文件：35.76 Kbytes Page：2 Pages	PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally	ADPOW Advanced Power Technology	ADPOW
APT1001RAN	文件：309.64 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
APT1001RBLC	文件：35.76 Kbytes Page：2 Pages	PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally	ADPOW Advanced Power Technology	ADPOW
APT1001RBN	文件：50.79 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT1001RBN	文件：359.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
APT1001RBNR	文件：371.21 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
APT1001RBVFR	文件：123.99 Kbytes Page：4 Pages	POWERMOSVFREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?AvalancheEner	ADPOW Advanced Power Technology	ADPOW
APT1001RBVFR	文件：371.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市科雨電子有限公司	AORN1002AT5	VISHAY	20+	電阻器	2683	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
現(xiàn)代芯城（深圳）科技有限公司	AORN10-1AT5		24+	N/A	76000	一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市高捷芯城科技有限公司	AORN2-1AT5	VISHAY(威世)	23+	SOP8	7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	AORV	IMP	23+	11	6500	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	AORV	IMP	23+	11	6500	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市昌和盛利電子有限公司	AOS	MIC	23+	SOT23-3	11923		詢價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	AOS		23+	TO252	16567	正品:QQ;2987726803	詢價(jià)
深圳市和悅電子貿(mào)易有限公司	AOS/AO3419	AOS	21+	SOT-23	10000		詢價(jià)
深圳市振宏微科技有限公司	AOS1006ES5-1.8-T1	SOT-153	23+	NA	15659	振宏微專業(yè)只做正品,假一罰百!	詢價(jià)
深圳市維爾達(dá)電子有限公司	AOS1006ES5-1.8-T1	原裝AAT	2023+	SOT-153	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)

更多AORN1001FTF供應(yīng)商更新時(shí)間2024-10-25 9:16:00

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