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AOT11S60L

600V 11A a MOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOT11S60L

600V 11A a MOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOT11S60L

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOTF11S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOTF11S60

600V11AaMOSPowerTransistor

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF11S60

600V11AaMOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF11S60

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

AOTF11S60

600V11AaMOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF11S60L

600V11AaMOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF11S60L

600V11AaMOS

GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOV11S60

DFN8X8PACKAGEMARKINGSDESCRIPTION

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOV11S60L

DFN8X8PACKAGEMARKINGSDESCRIPTION

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOW11S60

600V11AaMOSTMPowerTransistor

GeneralDescription TheAOW11S60&AOWF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOW11S60

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=11A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.399Ω(Max) ?100avalanchetested ?MinimumLot-to

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOWF11S60

600V11AaMOSTMPowerTransistor

GeneralDescription TheAOW11S60&AOWF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

T11S60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

詳細(xì)參數(shù)

  • 型號：

    AOT11S60L

  • 功能描述：

    MOSFET N-CH 600V 11A TO220

  • RoHS：

    是

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    aMOS™

  • 標(biāo)準(zhǔn)包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點(diǎn)：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時(shí)的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ALPHA萬代
17+
TO-220
6200
詢價(jià)
ALPHA萬代
20+
TO-220
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
AOS/萬代
21+
TO-220
580
原裝現(xiàn)貨假一賠十
 詢價(jià)
AOS
1809+
TO-220
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
AOS/萬代
23+
TO220
10000
公司只做原裝正品
 詢價(jià)
ALPHA萬代
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
AOS
22+
NA
3977
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
Alpha & Omega Semiconductor In
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Alpha & Omega Semiconductor In
21+
TO2203
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
ALPHA萬代
TO-220
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
更多AOT11S60L供應(yīng)商 更新時(shí)間2024-10-23 16:00:00

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