零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AOTF454L | Plastic Encapsulated Devicenull | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | |
AOTF454L | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU454usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU454isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
N-Channel40V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PowerSupply -SecondarySynchronousRectification ?DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU454usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU454isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type[2-Channel(FormB)Type] FEATURES 1.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.78×(H)3.9mm(W).252×(L).385×(H).154inch,8-pinDIPsize(throughholeterminaltype). 2.Applicablefor2FormBuseaswellastwoindependent1FormBuse. 3.Controlslow-levelanalogsignals Pho | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type[2-Channel(FormB)Type] FEATURES 1.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.78×(H)3.9mm(W).252×(L).385×(H).154inch,8-pinDIPsize(throughholeterminaltype). 2.Applicablefor2FormBuseaswellastwoindependent1FormBuse. 3.Controlslow-levelanalogsignals Pho | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type[2-Channel(FormB)Type] FEATURES 1.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.78×(H)3.9mm(W).252×(L).385×(H).154inch,8-pinDIPsize(throughholeterminaltype). 2.Applicablefor2FormBuseaswellastwoindependent1FormBuse. 3.Controlslow-levelanalogsignals Pho | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type[2-Channel(FormB)Type] FEATURES 1.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.78×(H)3.9mm(W).252×(L).385×(H).154inch,8-pinDIPsize(throughholeterminaltype). 2.Applicablefor2FormBuseaswellastwoindependent1FormBuse. 3.Controlslow-levelanalogsignals Pho | NAISNais(Matsushita Electric Works) 松下電器松下電器機電(中國)有限公司 | NAIS | ||
45AMPBLOCKDIODES | SHUNYEShanghai Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SHUNYE | ||
45AMPBLOCKDIODES | SHUNYEShanghai Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SHUNYE |
詳細參數(shù)
- 型號:
AOTF454L
- 功能描述:
MOSFET N-CH 150V 3A TO220F
- RoHS:
是
- 類別:
分離式半導體產(chǎn)品 >> FET - 單
- 系列:
-
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor In |
24+ |
TO-220F |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
AOS/萬代 |
2019+ |
TO220F |
6700 |
原廠渠道 可含稅出貨 |
詢價 | ||
AOS/萬代 |
24+ |
TO-220FL |
333888 |
專業(yè)直銷原裝AOS一系列可訂貨 |
詢價 | ||
AOS |
1844+ |
LQFP |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
AOS/萬代 |
專業(yè)鐵帽 |
TO-220F |
50 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
AOS |
20+ |
TO220F |
65300 |
一級代理/放心購買! |
詢價 | ||
AOS/萬代 |
23+ |
TO-220FL |
24190 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
AOS/萬國 |
2021+ |
TO-220FL |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
AOS/萬代 |
21+ |
TO-220FL |
330000 |
優(yōu)勢供應 實單必成 可13點增值稅 |
詢價 | ||
AOS |
21+ |
TO220F |
1650 |
原裝現(xiàn)貨假一賠十 |
詢價 |
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