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AOW10T60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOW10T60

600V,10A N-Channel MOSFET

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOW10T60P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOW10T60P

600V,10A N-Channel MOSFET

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOWF10T60P

600V,10AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

C10T60F

SQUARE-PAK,DualDiodes,UltraFastRecovery,LowForwardVoltageDrop

*SQUARE-PAKTO263ABCase(SMD) Packagedin24mmTapeandReel *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability *200Voltsthru600VoltsTypesAvailable

NIEC

Nihon Inter Electronics Corporation

G10T60

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

Features: ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime5?s ?Designedfor: -VariableSpeedDriveforwashingmachinesandairconditioners -inductioncooking -UninterruptedPowerSupply ?TRENCHSTOP?andFieldstoptechnologyfor60

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

K10T60

LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime–5μs ?Designedfor: -VariableSpeedDriveforwashingmachines,airco

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

RBR10T60ANZ

SchottkyBarrierDiode

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

SF10T60

10AmpSuperFastRecoveryRectifier

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SF10T60-C

10AmpSuperFastRecoveryRectifier

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SF10T60F

10AmpSuperFastRecoveryRectifier

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SF10T60F-C

10AmpSuperFastRecoveryRectifier

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SIGC10T60

IGBT3Chip

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SIGC10T60E

600Vtrench&fieldstoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SIGC10T60S

IGBT3Chip600VTrench&FieldStoptechnologypositivetemperaturecoefficient

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SIGC10T60S

Integrated3PhaseGateDriverChipproduct

1.1Features ?Thin-film-SOI-technology ?Insensitivityofthebridgeoutputtonegativetransientvoltagesupto-50V givenbySOI-technology ?Maximumblockingvoltage+600V ?Powersupplyofthehighsidedriversviabootstrap ?Integratedbootstrapfunctionality ?Separatecontrolcirc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SIGC10T60SE

TRENCHSTOPTMIGBT3Chip

Features: ?600Vtrench&fieldstoptechnology ?LowVCEsat ?Lowturn-offlosses ?Shorttailcurrent ?Positivetemperaturecoefficient ?Easyparalleling

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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AOS
1503+
TO-262
3000
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Alpha & Omega Semiconductor In
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
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Alpha & Omega Semiconductor In
21+
TO2623 Long Leads I2Pak TO262A
13880
公司只售原裝,支持實(shí)單
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Alpha & Omega Semiconductor In
23+
TO2623 Long Leads I2Pak TO262A
9000
原裝正品,支持實(shí)單
詢價(jià)
Alpha & Omega Semiconductor In
2022+
TO-262-3,長引線,I2Pak,TO-26
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
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AOS/萬代
23+
TO-262
10000
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AOS/萬代
23+
TO-262-3
50000
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AOS
22+
NA
6878
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AO/萬代
TO-262
68900
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AO/萬代
22+
TO-262
34137
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更多AOW10T60供應(yīng)商 更新時(shí)間2021-9-14 10:50:00