首頁 >AP18N20GS-HF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AP18N20GS-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | |
AP18N20GS-HF | Fast Switching Characteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | |
Simple Drive Requirement | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
Fast Switching Characteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
POWERFIELDEFFECTTRANSISTOR | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
N-Channel200V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-ChannelUniFETTMMOSFET200V,16A,125m廓 | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
N-channelEnhancementModePowerMOSFET Features ?VDS=200V,ID=24A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFET200V,18A,0.14廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
N-ChannelMOSFET200V,18A,0.14廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半導體深圳市福斯特半導體有限公司 | FOSTER | ||
N-Ch200VFastSwitchingMOSFETs Description TheFKD18N20isthehighestperformance trenchN-chMOSFETswithextremehighcell density,whichprovideexcellentRDSONandgate chargeformostofthesynchronousbuck converterapplications. TheFKD18N20meettheRoHSandGreen Productrequirement,100EASguaranteedwith | FETEKFETek Technology Corp. 臺灣東沅東沅科技股份有限公司 | FETEK | ||
N-Ch200VFastSwitchingMOSFETs Features ?AdvancedTrenchMOSTechnology ?LowGateCharge ?100EASGuaranteed ?GreenDeviceAvailable Applications ?LoadSwitch ?LEDApplications ?NetworkingApplications ?QuickCharger | FETEKFETek Technology Corp. 臺灣東沅東沅科技股份有限公司 | FETEK |
詳細參數(shù)
- 型號:
AP18N20GS-HF
- 制造商:
A-POWER
- 制造商全稱:
Advanced Power Electronics Corp.
- 功能描述:
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
APEC/富鼎 |
2021+ |
TO-263 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
SR |
23+ |
TO-263(S) |
6000 |
原裝正品,假一罰十 |
詢價 | ||
APEC |
20+ |
TO-263 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
APEC |
21+ |
TO-263 |
4660 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
APEC/富鼎 |
12+ |
TO-263-2 |
433 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
APEC/富鼎 |
23+ |
TO-263 |
21000 |
公司只做原裝正品 |
詢價 | ||
APEC/富鼎 |
23+ |
TO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
APEC/富鼎 |
2022+ |
TO-263 |
50000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
APEC |
TO-263 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
APEC |
22+ |
TO-263 |
25000 |
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十 |
詢價 |
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