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AP410C-WR

Wi-Fi 6 (802.11ax) Tri-Radio Access Point With Support for Multiple Extreme Operating Systems

TheAP410CispartofExtreme’sUniversalWi-FiplatformandprovidesusersthechoiceofWI-Fioperatingsystem(IQEngineorWiNGOperatingSystem).CustomershavetheflexibilitytoselecttheOSatstart-uporatalaterstageandtheAPwillassumethefeatures/capabilitiesoftheselectedOS

EXTREMENETWORKS

Extreme Networks.

AP410E

Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions

EXTREMENETWORKS

Extreme Networks.

AP410E-CAN

Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions

EXTREMENETWORKS

Extreme Networks.

AP410E-FCC

Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions

EXTREMENETWORKS

Extreme Networks.

AP410E-WR

Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions

EXTREMENETWORKS

Extreme Networks.

AP410I

Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions

EXTREMENETWORKS

Extreme Networks.

AP410I-CAN

Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions

EXTREMENETWORKS

Extreme Networks.

AP410I-FCC

Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions

EXTREMENETWORKS

Extreme Networks.

AP410I-IL

Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions

EXTREMENETWORKS

Extreme Networks.

AP410I-WR

Wi-Fi6(802.11ax)Tri-RadioAccessPointWithIntegratedorExternalAntennaOptions

EXTREMENETWORKS

Extreme Networks.

AQV410

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQV410EH

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQV410EHA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQV410EHAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQV410EHAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQW410EHA

PhotoMOSRelayDimensions

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

AQY410EH

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQY410EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHA

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQY410EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Nexans
2021+
標(biāo)準(zhǔn)接口
285000
專(zhuān)供連接器,軍工合格供應(yīng)商!
詢(xún)價(jià)
AMPHENOL/安費(fèi)諾
2420+
/
484664
一級(jí)代理,原裝正品!
詢(xún)價(jià)
AP(友盟)
21+
M
1780
中國(guó)航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領(lǐng)導(dǎo)者
詢(xún)價(jià)
NA
24+
2650
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨
詢(xún)價(jià)
KEYEBCE
24+
DIP
87
詢(xún)價(jià)
基恩士KEYENCE
23+
5235
原廠(chǎng)授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋?kù)存,詳
詢(xún)價(jià)
基恩士KEYENCE
2020+
壓力傳感器
500
只做原裝,可提供樣品
詢(xún)價(jià)
KEYENCE
23+
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
KEYENCE
23+
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
ASAHIKASEI
21+
TSSOP-30
23000
只做正品原裝現(xiàn)貨
詢(xún)價(jià)
更多AP410C-WR供應(yīng)商 更新時(shí)間2025-1-9 11:30:00