首頁 >AP4301BM-C>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AP4301BM-C | DUAL OPAMP AND VOLTAGE REFERENCE GeneralDescription TheAP4301isamonolithicICspecificallydesignedtocontroltheoutputcurrentandvoltagelevelsofswitchmodebatterychargersandpowersupplies. Features ?Inputoffsetvoltage:0.5mV ?Supplycurrent:250μAperOp-Ampat5.0Vsupplyvoltage ?Unitygainbandw | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | |
AP4301BM-C | DUAL OP AMP AND VOLTAGE REFERENCE | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | |
DUAL OP AMP AND VOLTAGE REFERENCE | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | ||
DUAL OP AMP AND VOLTAGE REFERENCE | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | ||
DUAL OP AMP AND VOLTAGE REFERENCE | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | ||
DUALOPAMPANDVOLTAGEREFERENCE GeneralDescription TheAP4301isamonolithicICspecificallydesignedtocontroltheoutputcurrentandvoltagelevelsofswitchmodebatterychargersandpowersupplies. Features ?Inputoffsetvoltage:0.5mV ?Supplycurrent:250μAperOp-Ampat5.0Vsupplyvoltage ?Unitygainbandw | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | ||
DUALOPAMPANDVOLTAGEREFERENCE | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | ||
DUALOPAMPANDVOLTAGEREFERENCE | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | ||
DUALOPAMPANDVOLTAGEREFERENCE GeneralDescription TheAP4301isamonolithicICspecificallydesignedtocontroltheoutputcurrentandvoltagelevelsofswitchmodebatterychargersandpowersupplies. Features ?Inputoffsetvoltage:0.5mV ?Supplycurrent:250μAperOp-Ampat5.0Vsupplyvoltage ?Unitygainbandw | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | ||
DUALOPAMPANDVOLTAGEREFERENCE | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | ||
DUALOPAMPANDVOLTAGEREFERENCE | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | ||
DUALOPAMPANDVOLTAGEREFERENCE GeneralDescription TheAP4301isamonolithicICspecificallydesignedtocontroltheoutputcurrentandvoltagelevelsofswitchmodebatterychargersandpowersupplies. Features ?Inputoffsetvoltage:0.5mV ?Supplycurrent:250μAperOp-Ampat5.0Vsupplyvoltage ?Unitygainbandw | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | ||
SAWRFfilterShortrangedevices Features ■Packagesize1.4x1.1x0.4mm3 ■PackagecodeQCS5P ■RoHScompatible ■Approximateweight0.003g ■PackageforSurfaceMountTechnology(SMT) ■Ni,gold-platedterminals ■AEC-Q200qualifiedcomponentfamily(operabletemperaturerange–40?Cto+85?C) ■Elect | EPCOSepcos 愛普科斯 | EPCOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-6A,RDS(ON)=42m?@VGS=-10V. RDS(ON)=65m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-6.3A,RDS(ON)=44m?@VGS=-10V. RDS(ON)=68m?@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
詳細參數
- 型號:
AP4301BM-C
- 制造商:
BCDSEMI
- 制造商全稱:
BCD Semiconductor Manufacturing Limited
- 功能描述:
DUAL OPAMP AND VOLTAGE REFERENCE
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
BCDSEMI |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
AP |
23+ |
SOP-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
AP |
SOP-8 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
AP |
23+ |
NA/ |
180 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
AP |
2023+ |
SOP-8 |
3685 |
全新原廠原裝產品、公司現(xiàn)貨銷售 |
詢價 | ||
BCD |
22+23+ |
SMD |
37272 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
BCD |
21+ |
SMD |
35200 |
一級代理分銷/放心采購 |
詢價 | ||
AZ |
23+ |
SOP-8 |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
BCD |
23+ |
SMD |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
BCD |
23+ |
SMD |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |
相關規(guī)格書
更多- AP4301BM-CE1
- AP4301BM-CTRE1
- AP4301BM-DE1
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相關庫存
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- AP4306BUKTR-E1
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