AP6508FE

500kHz 21V 3A SYNCHRONOUS DC/DC BUCK CONVERTER

AP6508FE-13

500kHz 21V 3A SYNCHRONOUS DC/DC BUCK CONVERTER

AP6508FE-13

包裝：卷帶（TR） 封裝/外殼：14-UFDFN 裸露焊盤 類別：集成電路（IC） 穩(wěn)壓器 - DC-DC 開關穩(wěn)壓器 描述：IC REG BUCK CONV DFN4030-14

AP6508FE-7

包裝：卷帶（TR） 封裝/外殼：14-UFDFN 裸露焊盤 功能：降壓 類別：集成電路（IC） 穩(wěn)壓器 - DC-DC 開關穩(wěn)壓器 描述：IC REG BUCK ADJ 3A DFN4030-14

AP6508FE-7

包裝：卷帶（TR） 封裝/外殼：14-UFDFN 裸露焊盤 功能：降壓 類別：集成電路（IC） DC DC 開關穩(wěn)壓器 描述：IC REG BUCK ADJ 3A DFN4030-14

C6508A

20C287/36TCPVCOASPVCCOMMUNICATIONCABLE

HM-6508

1024x1CMOSRAM

Description TheHM-6508isa1024x1staticCMOSRAMfabricatedusingself-alignedsilicongatetechnology.Synchronouscircuitdesigntechniquesareemployedtoachievehighperformanceandlowpoweroperation. Features ?LowPowerStandby....................50μWMax ?L

MAX6508

DualTripSOTTemperatureSwitches

MAX6508UT

DualTripSOTTemperatureSwitchesNoExternalComponentsRequired

MP6508

2.7V-to-18V,1.2A,BipolarStepperMotorDriverwithIntegratedMOSFETs

MP6508A

2.7Vto18V,1.2A,BipolarStepperMotorDriverinaQFN-16(3mmx3mm)Package

DESCRIPTION TheMP6508Aisabipolarsteppermotordriver withdual,built-infull-bridgesconsistingofNchannelpowerMOSFETs.Thedeviceoperates acrossa2.7Vto18Vinputvoltage(VIN)range andcandeliveramotorcurrentupto1.2Aper channel. Internalsafetyfeaturesincludeover-cu

MP6508AGQ

2.7Vto18V,1.2A,BipolarStepperMotorDriverinaQFN-16(3mmx3mm)Package

DESCRIPTION TheMP6508Aisabipolarsteppermotordriver withdual,built-infull-bridgesconsistingofNchannelpowerMOSFETs.Thedeviceoperates acrossa2.7Vto18Vinputvoltage(VIN)range andcandeliveramotorcurrentupto1.2Aper channel. Internalsafetyfeaturesincludeover-cu

MP6508GF

2.7V-to-18V,1.2A,BipolarStepperMotorDriverwithIntegratedMOSFETs

MP6508GR

2.7V-to-18V,1.2A,BipolarStepperMotorDriverwithIntegratedMOSFETs

MTD6508

3-PhaseSinusoidalSensorlessBrushlessDCFanMotorDriver

MTD6508-ADJE/JQ

3-PhaseSinusoidalSensorlessBrushlessDCFanMotorDriver

MTD6508T-E/NA

3-PhaseSinusoidalSensorlessBrushlessDCFanMotorDriver

N6508NZ

N-channelMOSFET650V,9.5A,0.85?

Description TheN6508NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=0.85?MAX.(VGS=10V,ID=4.75A) ?Lowinputcapacitance Ciss=2160pFTYP.(VDS=10V,VGS=0V) ?Highcurrent ID(DC)=±9

NTE6508

IntegratedCircuitCMOS,1KStaticRAM(SRAM)

Description: TheNTE6508isa1024x1fullystaticCMOSRAMina16–LeadDIPtypepackagefabricatedusingself–alignedsilicongatetechnology.Synchronouscircuitdesigntechniquesareemployedtoacheivehighperformanceandlowpoweroperation.Onchiplatchesareprovidedforaddressallowi

NX6508

LASERDIODE

1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES ?