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APE1004H

THE SLIM POWER RELAY

FEATURES ?Slimsize 28mm(L)×5mm(W)×15mm(H) 1.102inch(L)×.197inch(W)×.591inch(H) permitshighdensitymounting ?Wideswitchingcapacity:100mA/12VDC-6A/250VAC ?Highsensitivity:170mW ?Highbreakdown(4,000V)andsurge(6,000V)voltagebetweencontactsand

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

APE1004H

包裝:散裝 類別:繼電器 功率繼電器,高于 2 A 描述:RELAY GEN PURPOSE SPST 6A 4.5V

PanasonicElectricWorks

Panasonic Electric Works

APE1004H

包裝:管件 類別:繼電器 功率繼電器,高于 2 A 描述:RELAY GEN PURPOSE SPST 6A 4.5V

PanasonicElectricWorks

Panasonic Electric Works

APT1004

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1004RBN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1004RCN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RCN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1004RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1004RGN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RGN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1004RKN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RKN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ARD1004H

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

ARD1004HC

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

ARD1004HCQ

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

ARD1004HQ

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

ARJ-1004

GIGABITRJ45LANMAGNETIC

ABRACON

Abracon Corporation

AS1004

MicropowerVoltageReference

Description TheAS1004isatwo-terminalprecisionband-gapvoltagereferencewithalowturn-oncurrentof10μA. Features ?Lowvoltagereference ?10μAturn-oncurrentforAS1004-1.2 ?20μAturn-oncurrentforAS1004-2.5 ?±4mV(0.3)initialaccuracyforAS1004-1.2 ?

Astec

Astec America, Inc

產(chǎn)品屬性

  • 產(chǎn)品編號:

    APE1004H

  • 制造商:

    Panasonic Electric Works

  • 類別:

    繼電器 > 功率繼電器,高于 2 A

  • 系列:

    APE

  • 包裝:

    散裝

  • 安裝類型:

    通孔

  • 線圈電壓:

    4.5VDC

  • 觸頭外形:

    SPST-NO(1 Form A)

  • 開關(guān)電壓:

    250VAC - 最大

  • 線圈類型:

    無鎖存

  • 端接樣式:

    PC 引腳

  • 必須吸合電壓:

    2.97 VDC

  • 必須釋放電壓:

    0.225 VDC

  • 工作溫度:

    -40°C ~ 85°C

  • 觸頭材料:

    銀合金

  • 繼電器類型:

    通用

  • 描述:

    RELAY GEN PURPOSE SPST 6A 4.5V

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一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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2022+
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16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
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7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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更多APE1004H供應(yīng)商 更新時間2024-12-23 16:30:00