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B4301

SAWRFfilterShortrangedevices

Features ■Packagesize1.4x1.1x0.4mm3 ■PackagecodeQCS5P ■RoHScompatible ■Approximateweight0.003g ■PackageforSurfaceMountTechnology(SMT) ■Ni,gold-platedterminals ■AEC-Q200qualifiedcomponentfamily(operabletemperaturerange–40?Cto+85?C) ■Elect

EPCOSepcos

愛普科斯

CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-6A,RDS(ON)=42m?@VGS=-10V. RDS(ON)=65m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-6.3A,RDS(ON)=44m?@VGS=-10V. RDS(ON)=68m?@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM4301PAPT

P-ChannelEnhancementModeFieldEffectTransistor

CHENMKOchenmko

力勤股份有限公司

CHM4301ZPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE40VoltsCURRENT6.3Ampere FEATURE *Smallflatpackage.(SC-73/SOT-223) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplicat

CHENMKOchenmko

力勤股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    APM4301K

  • 制造商:

    SINOPOWER

  • 功能描述:

    IC, N-Channel Enhancement Mode Mosfet

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12888
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68900
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6800
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茂達(dá)
2023+
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50000
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茂達(dá)
23+
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6800
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APM
2020+
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更多APM4301K供應(yīng)商 更新時(shí)間2025-1-25 11:00:00