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APT1001RSVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching

ADPOW

Advanced Power Technology

APT1001RSVR

100 Avalanche Tested

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT1001RSVRG

100 Avalanche Tested

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching

MicrosemiMicrosemi Corporation

美高森美美高森美公司

ARJ-1001

GIGABITRJ45LANMAGNETIC

ABRACON

Abracon Corporation

ASH1001

10mmwideIP67&IP68LEDlightstrip

OPTOSUPPLY

OptoSupply International

ASI1001

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASI1001isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: ?PG=12dBmin.at1.0W/1,000MHz ?HermeticMicrostripPackage ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

AT-1001

HighPowerFixedAttenuators(Radiatorbuilt-in)

HighPowerFixedAttenuators(Radiatorbuilt-in) ■Features 1.SmallSizeandEconomical Berylliaisusedforthematerialoftheresistanceelementtoenabletheterminationtobeofsmallsizeandlowcost. 2.ConnectorsUsed Inthecouplingportion,theAT-1000SerieshasanSMAt

HIROSEHirose Electric Company

廣瀨日本廣瀨電機(jī)株式會(huì)社

AXHS1001

PLLSynthesizerinSMDpackage

AXTALAdvanced XTAL Products

advanced XTAL Products

AXHV1001

VCO-VoltageControlledOscillator

AXTALAdvanced XTAL Products

advanced XTAL Products

B1001ERW

LowCost1x2Inch10WWideInputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

詳細(xì)參數(shù)

  • 型號(hào)：

    APT1001RSVR

  • 制造商：

    ADPOW

  • 制造商全稱(chēng)：

    Advanced Power Technology

  • 功能描述：

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT
24+
8866
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APT
22+
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8200
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ADPOW
23+
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19960
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Microchip
21+
15000
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microchip
23+
15420
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MICROCHIP(美國(guó)微芯)
23+
TO268
7350
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MICROCHIP
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7300
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MICROCHIP
23+
7300
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MICROCHIP/微芯
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SMT
18000
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MICROCHIP(美國(guó)微芯)
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TO2683
6000
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更多APT1001RSVR供應(yīng)商 更新時(shí)間2025-2-25 14:30:00

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