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APT30M40JVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT30M40JVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV? PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?Fast

ADPOW

Advanced Power Technology

APT30M40LVFR

POWERMOSVFREDFET

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody

ADPOW

Advanced Power Technology

APT30M40LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody

ADPOW

Advanced Power Technology

APT30M40LVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=76A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT30M40LVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV? PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.. ?Fas

ADPOW

Advanced Power Technology

SBR30M40CTFP

30ASBR?SUPERBARRIERRECTIFIER

DIODES

Diodes Incorporated

SBR30M40CTFP

LowForwardVoltageDrop

DIODES

Diodes Incorporated

SBR30M40CTFP-G

LowForwardVoltageDrop

DIODES

Diodes Incorporated

SBR30M40CTFP-G

30ASBR?SUPERBARRIERRECTIFIER

DIODES

Diodes Incorporated

SBR30M40CTFP-JT-G

LowForwardVoltageDrop

DIODES

Diodes Incorporated

SBR30M40CTFP-JT-G

30ASBR?SUPERBARRIERRECTIFIER

DIODES

Diodes Incorporated

W30M40CT

30ASchottkyBarrierRectifier

semiWell

SemiWell Semiconductor

詳細參數(shù)

  • 型號：

    APT30M40LVFRG

  • 功能描述：

    MOSFET N-CH 300V 76A TO-264

  • RoHS：

    是

  • 類別：

    分離式半導體產(chǎn)品 >> FET - 單

  • 系列：

    POWER MOS V®

  • 標準包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應商設備封裝：

    TO-220FP

  • 包裝：

    管件

供應商型號品牌批號封裝庫存備注價格
APT
TO-264
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
APT
24+
TO-264
65
原裝正品,假一罰十!
 詢價
APT
24+
TO264TO3PL
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
APT
24+
8866
詢價
APT
20
原裝正品長期供貨，如假包賠包換 徐小姐13714450367
 詢價
APT
15+
TO-264
11560
全新原裝,現(xiàn)貨庫存,長期供應
 詢價
APT
22+
原廠原封
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
 詢價
APT
18+
2173
公司大量全新正品 隨時可以發(fā)貨
 詢價
APT
24+
TO-3PL
564
詢價
ADPOW
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
更多APT30M40LVFRG供應商 更新時間2024-11-15 16:42:00

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