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APT30M40JVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT30M40JVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV? PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?Fast

ADPOW

Advanced Power Technology

APT30M40LVFR

POWERMOSVFREDFET

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody

ADPOW

Advanced Power Technology

APT30M40LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody

ADPOW

Advanced Power Technology

APT30M40LVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=76A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT30M40LVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV? PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.. ?Fas

ADPOW

Advanced Power Technology

SBR30M40CTFP

30ASBR?SUPERBARRIERRECTIFIER

DIODES

Diodes Incorporated

SBR30M40CTFP

LowForwardVoltageDrop

DIODES

Diodes Incorporated

SBR30M40CTFP-G

LowForwardVoltageDrop

DIODES

Diodes Incorporated

SBR30M40CTFP-G

30ASBR?SUPERBARRIERRECTIFIER

DIODES

Diodes Incorporated

詳細(xì)參數(shù)

  • 型號(hào)：

    APT30M40LVRG

  • 功能描述：

    MOSFET N-CH 300V 76A TO-264

  • RoHS：

    是

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    POWER MOS V®

  • 標(biāo)準(zhǔn)包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點(diǎn)：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時(shí)的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
APT
23+
TO-264L
10000
公司只做原裝正品
 詢價(jià)
APT
22+
TO-264L
6000
十年配單,只做原裝
 詢價(jià)
APT
23+
TO-264L
6000
原裝正品，支持實(shí)單
 詢價(jià)
APT
22+
TO-264L
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
APT
22+
TO-3P
8200
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!
 詢價(jià)
APT
23+
TO-3P
3000
專做原裝正品,假一罰百!
 詢價(jià)
APT
2023+
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
APT
2021+
TO-3P
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
APT
23+
MODULE
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
APT
24+
MODULE
2100
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨
 詢價(jià)
更多APT30M40LVRG供應(yīng)商 更新時(shí)間2025-2-7 14:30:00

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