首頁 >APT5020BVFR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
APT5020BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery | ADPOW Advanced Power Technology | ADPOW | |
APT5020BVFR | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss. LowergatechargecoupledwithPowerMOSVI?optimizedgatelayout,deliversexceptionall | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitc | ADPOW Advanced Power Technology | ADPOW | ||
6-BITMAGNETICANGULARPOSITIONENCODERWITHSERIALINTERFACE GeneralDescription Thedeviceprovidestheabsoluteangularpositionofasimplemagnetthatisplacedunderorabovethedevice’ssurface.ThedeviceincludestheHallSensorArray,signalconditioningandpostprocessingneededtogeneratea6-bitbinarycode.Thebinarycodecanbeeasilyacc | AMSCOams AG 艾邁斯歐司朗艾邁斯歐司朗股份公司 | AMSCO | ||
6-BITMAGNETICANGULARPOSITIONENCODERWITHSERIALINTERFACE GeneralDescription Thedeviceprovidestheabsoluteangularpositionofasimplemagnetthatisplacedunderorabovethedevice’ssurface.ThedeviceincludestheHallSensorArray,signalconditioningandpostprocessingneededtogeneratea6-bitbinarycode.Thebinarycodecanbeeasilyacc | AMSCOams AG 艾邁斯歐司朗艾邁斯歐司朗股份公司 | AMSCO | ||
UL94V-0PBTimpellerandframe | MECHATRONICS Mechatronics, Inc. | MECHATRONICS | ||
DCBLOWERS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
UL94V-0PBTimpellerandframe | MECHATRONICS Mechatronics, Inc. | MECHATRONICS | ||
50AAVALANCHEBOSCHTYPEPRESS-FITDIODE Features ●DiffusedJunction ●LowLeakage ●LowCost ●HighSurgeCurrentCapability ●TypicalIRlessthan200nA | WTEWon-Top Electronics 毅星電子毅星電子股份有限公司 | WTE | ||
50AAVALANCHEBOSCHTYPEPRESS-FITDIODE | WTEWon-Top Electronics 毅星電子毅星電子股份有限公司 | WTE | ||
SiliconN-ChannelMOSFETTetrode SiliconN-ChannelMOSFETTetrode ?LownoisegaincontrolledinputstagesofUHF-andVHF-tunerswith3Vupto5Vsupplyvoltage ?Integratedgateprotectiondiodes ?Excellentnoisefigure ?Highgain,highforwardtransadmittance ?Improvedcrossmodulationatgainreduction ?Pb-free | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconN-ChannelMOSFETTetrode SiliconN-ChannelMOSFETTetrode ?LownoisegaincontrolledinputstagesofUHF-andVHF-tunerswith3Vupto5Vsupplyvoltage ?Integratedgateprotectiondiodes ?Excellentnoisefigure ?Highgain,highforwardtransadmittance ?Improvedcrossmodulationatgainreduction ?Pb-free | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconN-ChannelMOSFETTetrode SiliconN-ChannelMOSFETTetrode ?LownoisegaincontrolledinputstagesofUHF-andVHF-tunerswith3Vupto5Vsupplyvoltage ?Integratedgateprotectiondiodes ?Excellentnoisefigure ?Highgain,highforwardtransadmittance ?Improvedcrossmodulationatgainreduction ?Pb-free | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
50AAVALANCHEAUTOMOTIVECELLDIODE Features ●DiffusedJunction ●LowLeakage ●LowCost ●HighSurgeCurrentCapability ●DieSize220milHEX | WTEWon-Top Electronics 毅星電子毅星電子股份有限公司 | WTE | ||
50AAVALANCHEAUTOMOTIVECELLDIODE | WTEWon-Top Electronics 毅星電子毅星電子股份有限公司 | WTE |
詳細參數(shù)
- 型號:
APT5020BVFR
- 制造商:
ADPOW
- 制造商全稱:
Advanced Power Technology
- 功能描述:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
APT |
19+ |
MODULE |
1290 |
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126 |
詢價 | ||
APT |
24+ |
TO-247 |
1350 |
詢價 | |||
APT |
16+ |
TO-3PL |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
APT |
22+ |
TO-247 |
12000 |
進口原裝 |
詢價 | ||
APT |
23+ |
TO-247 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
APT |
23+ |
TO-3P |
3000 |
專做原裝正品,假一罰百! |
詢價 | ||
APT |
20+ |
TO-247 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
APT |
2023+ |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | |||
APT |
24+ |
TO-247 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
APT |
24+ |
TO-247 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 |
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