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APT6060BNR

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT6060CN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT6060DN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AXIOM6060

QualifiedaccordingtoMIL-PRF-55310Level???

AXTALAdvanced XTAL Products

advanced XTAL Products

AXIOM6060A

Ultra-LowPhaseNoise120MHzOCXOforSpaceApplication

AXTALAdvanced XTAL Products

advanced XTAL Products

BLP6060A

BLP6060A

BLP6060A

BellingSHANGHAI BELLING CO., LTD.

上海貝嶺上海貝嶺股份有限公司

C6060A

17SP227/30TCPEPVCComputerCable

GENERALGeneral Cable Technologies Corporation

通用電氣公司美國通用電氣公司

CEB6060

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,50A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060L

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,52.4A,RDS(ON)=21mW@VGS=10V. RDS(ON)=25mW@VGS=5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6060LR

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●60V,60A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,42A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,42A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6060R

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060R

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,48A,RDS(ON)=24mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=29mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6060N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6060N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6060N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,34A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. TO-251&TO-252package.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    APT6060BNR

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 13A I(D) | TO-247AD

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APT
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TO-247
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APT
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APT
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8000
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APT
23+
TO-247
7300
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APT
23+
TO-247
7300
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APT
18
200
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APT
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APT
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更多APT6060BNR供應(yīng)商 更新時(shí)間2024-12-22 14:36:00