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APT904R2AN

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=3.5A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT904R2BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT904R2CN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT904R2GN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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APT
24+
TO-247
2050
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APT
24+
TO-247
1298
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APT
22+
TO-247
8000
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APT
23+
TO-247
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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APT
23+
TO-247
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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ISC/固電
23+
TO-3PN
30011
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MICROSEMI
638
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Microsemi
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N/A
908
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SOT-227
326
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Microsemi Corporation
22+
SOT227
9000
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更多APT904R2AN供應(yīng)商 更新時(shí)間2025-2-25 14:05:00

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