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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
AQV414EAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EH	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EHA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EHAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EHAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414S	文件：157.89 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
AQW414	文件：39.54 Kbytes Page：2 Pages	GU(GeneralUse)Type[2-Channel(FormB)Type]	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
AQW414	文件：169.72 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
AQW414A	文件：169.72 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
AQW414EH	文件：75.52 Kbytes Page：3 Pages	Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype. FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
AQW414EHA	文件：75.52 Kbytes Page：3 Pages	Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype. FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
AQW414EHAX	文件：75.52 Kbytes Page：3 Pages	Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype. FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
AQW414EHAZ	文件：75.52 Kbytes Page：3 Pages	Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype. FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
AQW414S	文件：158.29 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
AQY414	文件：151.02 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY [CLOBALcomponents&controls] DESCRIPTION TheAQY414Sisasinglepolesinglethrow(SPST),normallyclose(NC),MosRelay.therelaycancontrolAcorDCloadscurrentsupto130mA,withasupplyvoltageupto400V.Thedeviceispackagedina4pinSopackage.Thispackageoffersanins	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
AQY414EH	文件：49.7 Kbytes Page：3 Pages	GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQY414EH	文件：81.93 Kbytes Page：3 Pages	NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
AQY414EHA	文件：49.7 Kbytes Page：3 Pages	GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQY414EHA	文件：81.93 Kbytes Page：3 Pages	NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic

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詳細(xì)參數(shù)

型號(hào)：
AQV414EAJ
制造商：
Panasonic Electric Works

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	AQV414EAX	NAIS	24+	SOP	780		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	AQV414EAX	NAIS	23+	SOP	7000	絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!	詢價(jià)
深圳市錦達(dá)世紀(jì)科技有限公司	AQV414EAX	NAIS	06+	SOP6	2000		詢價(jià)
深圳市福安甌科技有限公司	AQV414EAX	NAIS	22+	SOP6	2500	強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!	詢價(jià)
深圳市佳鑫美電子科技有限公司	AQV414EAX	NAIS	24+	SOP	3200	絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫(kù)存!歡迎來(lái)電!	詢價(jià)
上海鑫科潤(rùn)電子科技有限公司	AQV414EAX	NAIS	1998	SMD	880	原裝現(xiàn)貨海量庫(kù)存歡迎咨詢	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	AQV414EAX	PANASONIC	22+	原廠原封	8200	原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	AQV414EAX	Panasonic	20+	SIP-6P	15800	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票	詢價(jià)
深圳市維爾達(dá)電子有限公司	AQV414EAX	NAIS	2023+	SOP	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
深圳市粵駿騰電子科技有限公司	AQV414EAX	NAIS松下	24+	SMDDIP	12500	原裝正品現(xiàn)貨	詢價(jià)

更多AQV414EAJ供應(yīng)商更新時(shí)間2025-1-13 16:30:00

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