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AQY410EH

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQY410EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHA

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQY410EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHAX

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQY410EHAX

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHAZ

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQY410EHAZ

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410SX

GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQY410SZ

GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    AQW410SZ

  • 功能描述：

    固態(tài)繼電器-PCB安裝 RELAY OPTO DPST-NC 100MA 8SOP

  • RoHS：

    否

  • 制造商：

    Omron Electronics

  • 負(fù)載電壓額定值：

    40 V

  • 負(fù)載電流額定值：

    120 mA

  • 觸點(diǎn)形式：

    1 Form A(SPST-NO)

  • 輸出設(shè)備：

    MOSFET

  • 封裝/箱體：

    USOP-4

  • 安裝風(fēng)格：

    SMD/SMT

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
panasoni
專業(yè)光耦
SOP8
65800
光耦原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
NAIS
12+
DIPSOP
18346
原裝現(xiàn)貨
 詢價(jià)
PAN
23+
DIP8-SOP8
3526
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價(jià)
NAIS
24+/25+
200
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
24+
DIP-8
17
詢價(jià)
NAIS
09+
DIP8
4411
只售全新原裝貨真實(shí)現(xiàn)貨放心查詢
 詢價(jià)
NAIS
06+
DIP8
2000
詢價(jià)
NAIS
24+
SOP8
3500
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
Panasonic
24+
DIP8
5650
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
 詢價(jià)
NAIS
10+
DIP8
7800
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
更多AQW410SZ供應(yīng)商 更新時(shí)間2025-5-4 14:14:00

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