AQY412EHAZ繼電器的固態(tài)繼電器規(guī)格書PDF中文資料

FEATURES

1. High cost-performance type of

PhotoMOS 1 Form B output

2. Low on-resistance

This has been realized thanks to the

built-in MOSFET processed by our

proprietary method, DSD (Double

diffused and Selective Doping) method.

3. Reinforced insulation of 5,000 V

More than 0.4 mm internal insulation

distance between inputs and outputs.

Conforms to EN41003, EN60950

(reinforced insulation).

4. Controls low-level analog signals

PhotoMOS feature extremely low closed

circuit offset voltage to enable control of

low-level analog signals without

distortion.

5. High sensitivity and low on resistance

Can control max. 0.55 A load current with

5 mA input current.

Low on-resistance of typ.1?

(AQY412EH).

6. Low-level off-state leakage current

TYPICAL APPLICATIONS

? Power supply

? Measuring equipment

? Security equipment

? Modem

? Telephone equipment

? Electricity, plant equipment

? Sensing equipment