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AS29LV160B中文資料ALSC數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

AS29LV160B
廠商型號(hào)

AS29LV160B

功能描述

3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

文件大小

561.88 Kbytes

頁(yè)面數(shù)量

29 頁(yè)

生產(chǎn)廠商 Alliance Semiconductor Corporation
企業(yè)簡(jiǎn)稱(chēng)

ALSC

中文名稱(chēng)

Alliance Semiconductor Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-20 23:09:00

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AS29LV160B規(guī)格書(shū)詳情

Features

? Organization: 2M×8 / 1M×16

? Sector architecture

- One 16K; two 8K; one 32K; and thirty-one 64K byte sectors

- One 8K; two 4K; one 16K; and thirty-one 32K word sectors

- Boot code sector architecture—T (top) or B (bottom)

- Erase any combination of sectors or full chip

? Single 2.7-3.6V power supply for read/write operations

? Sector protection

? High speed 70/80/90/120 ns address access time

? Automated on-chip programming algorithm

- Automatically programs/verifies data at specified address

? Automated on-chip erase algorithm

- Automatically preprograms/erases chip or specified sectors

? Hardware RESET pin

- Resets internal state machine to read mode

? Low power consumption

- 200 nA typical automatic sleep mode current

- 200 nA typical standby current

- 10 mA typical read current

? JEDEC standard software, packages and pinouts

- 48-pin TSOP

- 44-pin SO (availability TBD)

? CFI (Common Flash Interface) compliant

? Detection of program/erase cycle completion

- DQ7 DATA polling

- DQ6 toggle bit

- RY/BY output

? Erase suspend/resume

- Supports reading data from or programming data to a sector not being erased

? Low VCC write lock-out below 1.5V

? 10 year data retention at 150C

? 100,000 write/erase cycle endurance

產(chǎn)品屬性

  • 型號(hào):

    AS29LV160B

  • 制造商:

    ALSC

  • 制造商全稱(chēng):

    Alliance Semiconductor Corporation

  • 功能描述:

    3W 2M x 8/1M x 16 - CMOS Flash EEPROM

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