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AS321KTR-E1

Marking：E6T；Package：SOT25；LOW POWER SINGLE OPERATIONAL AMPLIFIER

Features ?ExcellentPhaseMargin:60deg. ?LargeVoltageGain:100dB(Typical) ?LowInputBiasCurrent:20nA(Typical) ?LowInputOffsetVoltage:2mV(Typical) ?LowSupplyCurrent:0.35mAatVCC=5V ?WidePowerSupplyVoltage: ?SingleSupply:3Vto36V ?DualSupplies:±1.5Vto±18

DIODES

Diodes Incorporated

AS321KTR-G1

Marking：G6T；Package：SOT25；LOW POWER SINGLE OPERATIONAL AMPLIFIER

Features ?ExcellentPhaseMargin:60deg. ?LargeVoltageGain:100dB(Typical) ?LowInputBiasCurrent:20nA(Typical) ?LowInputOffsetVoltage:2mV(Typical) ?LowSupplyCurrent:0.35mAatVCC=5V ?WidePowerSupplyVoltage: ?SingleSupply:3Vto36V ?DualSupplies:±1.5Vto±18

DIODES

Diodes Incorporated

AS321KTR

LOW POWER SINGLE OPERATIONAL AMPLIFIER

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

AS321KTR-E1

LOW POWER SINGLE OPERATIONAL AMPLIFIER

BCDSEMIBCD Semiconductor Manufacturing Limited

新進半導體上海新進半導體制造有限公司

AS321KTR-E1

LOW POWER SINGLE OPERATIONAL AMPLIFIER Battery Charger

BCDSEMIBCD Semiconductor Manufacturing Limited

新進半導體上海新進半導體制造有限公司

AS321KTR-G1

LOW POWER SINGLE OPERATIONAL AMPLIFIER Battery Charger

BCDSEMIBCD Semiconductor Manufacturing Limited

新進半導體上海新進半導體制造有限公司

ATAVRMC321

8-bitMicrocontrollers

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AV-321

GearTrainActuatorValveLinkagesGeneralInstructions

SCHNEIDERSchneider Electric

施耐德施耐德電氣

AZV321

SINGLELOWVOLTAGERAIL-TO-RAILOUTPUTOPERATIONALAMPLIFIER

BCDSEMIBCD Semiconductor Manufacturing Limited

新進半導體上海新進半導體制造有限公司

AZV321

SINGLELOWVOLTAGERAIL-TO-RAILOUTPUTOPERATIONALAMPLIFIER

BCDSEMIBCD Semiconductor Manufacturing Limited

新進半導體上海新進半導體制造有限公司

AZV321

SINGLELOWVOLTAGERAIL-TO-RAILOUTPUTOPERATIONALAMPLIFIER

Features ?Guaranteed2.7Vto5.5VPerformance ?NoCrossoverDistortion ?Gain-BandwidthProduct1MHz ?IndustrialTemperatureRange:-40oCto+85oC ?LowSupplyCurrent:130μA ?Rail-to-RailOutputSwingunder10kΩLoad: VOHuptoVCC-10mV VOLneartoVEE+65mV ?VCM:-0.1VtoVCC-0.8V

DIODES

Diodes Incorporated

BAS321

Generalpurposediode

DESCRIPTION TheBAS321isageneralpurposediodefabricatedinplanartechnologyandencapsulatedinaplasticSOD323package. FEATURES ?SmallplasticSMDpackage ?Switchingspeed:max.50ns ?Generalapplication ?Continuousreversevoltage:max.200V ?Repetitivepeakreversevoltage

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BAS321

Generalpurposediode

Generaldescription GeneralpurposediodefabricatedinplanartechnologyandencapsulatedinaverysmallplasticSOD323(SC76)package. Featuresandbenefits ?SmallplasticSMDpackage ?Switchingspeed:max.50ns ?Generalapplication ?Continuousreversevoltage:max.200V ?Repetiti

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BAS321

GeneralPurposeDiode

Features ?VerysmallplasticSMDpackage. ?Highswitchingspeed:max.50ns ?Continuousreversevoltage:max.200v ?Repetitivepeakreversevoltage:max.250v ?Repetitivepeakforwardcurrent:max.650mA ?RoHScompliantpackage

BWTECH

Bruckewell Technology LTD

BAS321

SiliconEpitaxialPlanarDiode

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

BAS321

BAS321Generalpurposediode

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BAS321

Generalpurposediode

1.Generaldescription GeneralpurposediodefabricatedinplanartechnologyandencapsulatedinaverysmallSOD323 (SC-76)plasticpackage. 2.Featuresandbenefits ?SmallplasticSMDpackage ?Switchingspeed:max.50ns ?Generalapplication ?Continuousreversevoltage:max.200V

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BAS321-HF

Small-SignalFastSwitchingDiodes

Features -Fastswitchingspeed. -Lowleakagecurrent.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

BAS321J

High-voltageswitchingdiode

1.Generaldescription High-voltageswitchingdiodeinaverysmallSOD323F(SC-90)flatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits ?Highswitchingspeed:trr≤50ns ?Lowleakagecurrent:IR≤100nA ?HighreversevoltageVR≤200V ?Lowcapacitance:

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BAS321-Q

Generalpurposediode

1.Generaldescription GeneralpurposediodefabricatedinplanartechnologyandencapsulatedinaverysmallSOD323 (SC-76)plasticpackage. 2.Featuresandbenefits ?SmallplasticSMDpackage ?Switchingspeed:max.50ns ?Generalapplication ?Continuousreversevoltage:max.200V

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數

  • 型號：

    AS321K

  • 制造商：

    BCDSEMI

  • 制造商全稱：

    BCD Semiconductor Manufacturing Limited

  • 功能描述：

    LOW POWER SINGLE OPERATIONAL AMPLIFIER

供應商型號品牌批號封裝庫存備注價格
Diodes Incorporated
24+
SC-74A,SOT-753
25000
in stock線性IC-原裝正品
 詢價
DIODES/美臺
2019+
SOT23-5
3470
原廠渠道 可含稅出貨
 詢價
DIODES/美臺
21+
SOT23-5
18640
只做原裝,假一罰十
 詢價
DIODES
2021
SOT23-5
18000
原裝現貨只有原裝
 詢價
DIODES
23+
SOT23-5
30000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
DIODES/美臺
新年份
SOT23-5
6300
只做原裝,公司現貨,提供一站式BOM配單服務!
 詢價
DIODES/美臺
22+
SOT23-5
3000
十七年VIP會員,誠信經營，一手貨源，原裝正品可零售！
 詢價
DIODES/美臺
2021+
SOT23-5
9000
原裝現貨,隨時歡迎詢價
 詢價
DIODES
2024
SOT23-5
18877
全新原裝正品,現貨銷售
 詢價
DIODES
24+
SOT23-5
60000
只做原裝 有掛有貨 假一賠十
 詢價
更多AS321K供應商 更新時間2025-1-19 14:14:00

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