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AS4C1M16E5

5V1M?16CMOSDRAM(EDO)

Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop

ALSC

Alliance Semiconductor Corporation

MT4C1M16E5

EDODRAM

GENERALDESCRIPTION The1Megx16isarandomlyaccessed,solid-statememorycontaining16,777,216bitsorganizedinax16configuration. FEATURES ?JEDEC-andindustry-standardx16timing,functions,pinouts,andpackages ?High-performanceCMOSsilicon-gateprocess ?Singlepowersupply(+

MicronMicron Technology

鎂光美國鎂光科技有限公司

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24+
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942
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AS
24+
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5000
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AS
22+23+
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38995
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1926+
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6852
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AS
2023+
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80000
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ALLIANCE
0028
SOP
60
普通
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AS
SOJ
68900
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23+
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3000
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AS
23+
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7300
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AS
23+
SOJ
7300
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更多AS4C1M16E5-XXJC供應(yīng)商 更新時(shí)間2025-1-21 14:30:00