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AS4C4M4F1-60TC中文資料ALSC數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

AS4C4M4F1-60TC
廠商型號(hào)

AS4C4M4F1-60TC

功能描述

5V 4M?4 CMOS DRAM (Fast Page mode)

文件大小

274.56 Kbytes

頁(yè)面數(shù)量

18 頁(yè)

生產(chǎn)廠商 Alliance Semiconductor Corporation
企業(yè)簡(jiǎn)稱

ALSC

中文名稱

Alliance Semiconductor Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-2-10 22:34:00

AS4C4M4F1-60TC規(guī)格書(shū)詳情

Functional description

The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in PC, workstation, router and switch applications.

Features

? Organization: 4,194,304 words × 4 bits

? High speed

- 50/60 ns RAS access time

- 25/30 ns column address access time

- 12/15 ns CAS access time

? Low power consumption

- Active: 908 mW max

- Standby: 5.5 mW max, CMOS I/O

? Fast page mode

? Refresh

- 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0

- 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1

- RAS-only or CAS-before-RAS refresh or self-refresh

? TTL-compatible, three-state I/O

? JEDEC standard package

- 300 mil, 24/26-pin SOJ

- 300 mil, 24/26-pin TSOP

? Latch-up current ≥ 200 mA

? ESD protection ≥ 2000 mV

? Industrial and commercial temperature available

產(chǎn)品屬性

  • 型號(hào):

    AS4C4M4F1-60TC

  • 功能描述:

    x4 Fast Page Mode DRAM

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ALLIANCE
19+
5
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4145
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8685
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23+origianl
DRAM
12000
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Alliance Memory Inc
23+/24+
96-TFBGA
8600
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5
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NA
396
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Alliance
22+
BGA
3000
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ALLIANCE
24+
9850
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ALSC
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