AS4LC2M8S1-12TC中文資料ALSC數(shù)據(jù)手冊PDF規(guī)格書

Functional description

The AS4LC2M8S1 and AS4LC1M16S1 are high-performance 16-megabit CMOS Synchronous Dynamic Random Access Memory (SDRAM) devices organized as 1,048,576 words × 8 bits × 2 banks (2048 rows × 512 columns) and 524,288 words × 16 bits × 2 banks (2048 rows × 256 columns), respectively. Very high bandwidth is achieved using a pipelined architecture where all inputs and outputs are referenced to the rising edge of a common clock. Programmable burst mode can be used to read up to a full page of data (512 bytes for 2M × 8 and 256 bytes for 1M × 16) without selecting a new column address.

Features

? Organization

- 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address

- 524,288 words × 16 bits × 2 banks (1M × 16) 11 row,8 column address

? All signals referenced to positive edge of clock, fully synchronous

? Dual internal banks controlled by A11 (bank select)

? High speed

- 143/125/100 MHz

- 7/8/10 ns clock access time

? Low power consumption

- Active: 576 mW max

- Standby: 7.2 mW max, CMOS I/O

? 2048 refresh cycles, 64 ms refresh interval

? Auto refresh and self refresh (2K self refresh mode at 64 ms)

? PC100 functionality

? Automatic and direct precharge including concurrent autoprecharge

? Burst read, write/Single write

? Random column address assertion in every cycle, pipelined operation

? LVTTL compatible I/O

? 3.3V power supply

? JEDEC standard package, pinout and function

- 400 mil, 44-pin TSOP II (2M × 8)

- 400 mil, 50-pin TSOP II (1M × 16)

? Read/write data masking

? Programmable burst length (1/2/4/8/ full page)

? Programmable burst sequence (sequential/interleaved)

? Programmable CAS latency (1/2/3)