AS7C1024B集成電路（IC）的存儲器規(guī)格書PDF中文資料

Functional description

The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems.

Features

? Industrial and commercial temperatures

? Organization: 131,072 words x 8 bits

? High speed

- 10/12/15/20 ns address access time

- 5/6/7/8 ns output enable access time

? Low power consumption: ACTIVE

- 605 mW / max @ 10 ns

? Low power consumption: STANDBY

- 55 mW / max CMOS

? 6T 0.18u CMOS technology

? Easy memory expansion with CE1, CE2, OE inputs

? TTL/LVTTL-compatible, three-state I/O

? 32-pin JEDEC standard packages

- 300 mil SOJ

- 400 mil SOJ

- 8 × 20mm TSOP 1

- 8 x 13.4mm sTSOP 1

? ESD protection ≥ 2000 volts

? Latch-up current ≥ 200 mA