AS7C33256NTD18B-166TQIN中文資料ALSC數(shù)據(jù)手冊PDF規(guī)格書

Functional description

The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

Features

? Organization: 131,072 words × 32 or 36 bits

? Fast clock speeds to 200 MHz

? Fast clock to data access: 3.0/3.5/4.0 ns

? Fast OE access time: 3.0/3.5/4.0 ns

? Fully synchronous register-to-register operation

? Single-cycle deselect

? Asynchronous output enable control

? Available in 100-pin TQFP package

? Individual byte write and global write

? Multiple chip enables for easy expansion

? 3.3V core power supply

? 2.5V or 3.3V I/O operation with separate VDDQ

? Linear or interleaved burst control

? Snooze mode for reduced power-standby

? Common data inputs and data outputs