AS7C34098-12TIN中文資料ALSC數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Functional description

The AS7C4098 and AS7C34098 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 262,144 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems.

Features

? AS7C4098 (5V version)

? AS7C34098 (3.3V version)

? Industrial and commercial temperature

? Organization: 262,144 words × 16 bits

? Center power and ground pins

? High speed

- 10/12/15/20 ns address access time

- 5/6/7/8 ns output enable access time

? Low power consumption: ACTIVE

- 1375 mW (AS7C4098)/max @ 12 ns

- 576 mW (AS7C34098)/max @ 10 ns

? Low power consumption: STANDBY

- 110 mW (AS7C4098)/max CMOS

- 72 mW (AS7C34098)/max CMOS

? Individual byte read/write controls

? Easy memory expansion with CE, OE inputs

? TTL- and CMOS-compatible, three-state I/O

? 44-pin JEDEC standard packages

- 400-mil SOJ

- TSOP 2

? ESD protection ≥ 2000 volts

? Latch-up current ≥ 100 mA