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BF998

SiliconN_ChannelMOSFETTetrode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BF998

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features ?Integratedgateprotectiondiodes ?Lownoisefigure ?Lowfeedbackcapacitance ?Highcrossmodulationperformance ?Lowinputcapacitance ?HighAGC-range ?Highgain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF998

SiliconN-channeldual-gateMOS-FETs

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF998

SiliconNChannelMOSFETTetrode(Short-channeltransistorwithhighS/CqualityfactorForlow-noise,gain-controlledinputstagesupto1GHz)

Features ●Short-channeltransistorwithhighS/Cqualityfactor ●Forlow-noise,gain-controlledinputstagesupto1GHz

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BF998

SiliconN-ChannelMOSFETTetrode

SiliconN_ChannelMOSFETTetrode ?Short-channeltransistorwithhighS/Cqualityfactor ?Forlow-noise,gain-controlledinputstageupto1GHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BF998

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF998

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF998A

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF998A

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features ?Integratedgateprotectiondiodes ?Lownoisefigure ?Lowfeedbackcapacitance ?Highcrossmodulationperformance ?Lowinputcapacitance ?HighAGC-range ?Highgain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF998B

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features ?Integratedgateprotectiondiodes ?Lownoisefigure ?Lowfeedbackcapacitance ?Highcrossmodulationperformance ?Lowinputcapacitance ?HighAGC-range ?Highgain ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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更多AS998BN供應(yīng)商 更新時(shí)間2025-3-10 15:10:00

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